ATF55143 HP [Agilent(Hewlett-Packard)], ATF55143 Datasheet - Page 6

• Manufacturer Part Number: ATF55143
• Description: Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
• Manufacturer: HP [Agilent(Hewlett-Packard)]

ATF-55143 Typical Performance Curves, continued
Notes:
1. Measurements at 2 GHz were made on a
Figure 21. Gain vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
Figure 24. IIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
requirements. Measurements taken above
and below 2 GHz were made using a double
28
23
18
13
16
14
12
10
-2
-4
-6
8
8
6
4
2
0
0
0
1
1
25 C
-40 C
85 C
FREQUENCY (GHz)
FREQUENCY (GHz)
2
2
3
3
4
4
5
5
[1]
25 C
-40 C
85 C
[1]
6
6
2. P1dB measurements are performed with
Figure 22. Fmin vs. Frequency and
Temperature at 2.7V, 10 mA.
Figure 25. P1dB vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
passive biasing. Quiescent drain current, I
is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or
decrease depending on frequency and dc bias
2.0
1.5
1.0
0.5
16
15
14
13
12
11
10
0
0
0
1
1
25 C
-40 C
85 C
FREQUENCY (GHz)
FREQUENCY (GHz)
2
2
6
3
3
4
4
5
5
[1,2]
25 C
-40 C
85 C
6
6
dsq
,
point. At lower values of I
running close to class B as power output
approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a
constant current source as is typically done
with active biasing. As an example, at a V
2.7V and I
a P1dB of +14.5 dBm is approached.
Figure 23. OIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
25
24
23
22
21
20
19
0
dsq
1
= 5 mA, I
FREQUENCY (GHz)
2
d
increases to 15 mA as
3
dsq
, the device is
4
5
25 C
-40 C
[1]
85 C
DS
6
=