ATF55143 HP [Agilent(Hewlett-Packard)], ATF55143 Datasheet - Page 2

• Manufacturer Part Number: ATF55143
• Description: Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
• Manufacturer: HP [Agilent(Hewlett-Packard)]

ATF-55143 Absolute Maximum Rating s
I
I
P
P
T
T
Product Consistency Distribution Charts
Notes:
6.
7.
Symbol
V
V
V
DS
GS
300
250
200
150
100
Figure 2. OIP3 @ 2.7 V, 10 mA.
LSL = 22.0, Nominal = 24.2
CH
STG
diss
in max.
jc
DS
GS
GD
50
0
Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
production test equipment. Circuit losses have been de-embedded from actual measurements.
Figure 1. Typical I-V Curves.
(V
22
GS
70
60
50
40
30
20
10
0
= 0.1 V per step)
0
-3 Std
23
1
OIP3 (dBm)
2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
ESD (Human Body Model)
ESD (Machine Model)
24
V
3
DS
(V)
4
[5]
25
Cpk = 2.02
Stdev = 0.36
[2]
[5]
5
[2]
[4]
[2]
6
[2]
26
0.7 V
0.6 V
0.5 V
0.4 V
0.3V
[3]
7
[1]
[6, 7]
Figure 3. Gain @ 2.7 V, 10 mA.
USL = 18.5, LSL = 15.5, Nominal = 17.7
200
160
120
80
40
0
15
Units
V
V
V
mA
mA
mW
dBm
V
V
Cpk = 1.023
Stdev = 0.28
C
C
C/W
16
GAIN (dB)
-3 Std
2
17
Absolute
Maximum
5
-5 to 1
5
100
1
270
7
150
-65 to 150
235
200
25
18
+3 Std
19
Notes:
1. Operation of this device above any one of
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25 C. Derate
4. Thermal resistance measured using
5. Device can safely handle +3 dBm RF Input
240
200
160
120
Figure 4. NF @ 2.7 V, 10 mA.
USL = 0.9, Nominal = 0.6
80
40
these parameters may cause permanent
damage.
4.3 mW/ C for T
150 C Liquid Crystal Measurement method.
Power as long as I
P
applications section for additional information.
0
0.43
1dB
drive level is bias circuit dependent. See
0.53
0.63
L
+3 Std
NF (dB)
> 87 C.
GS
is limited to 1 mA. I
0.73
Cpk = 3.64
Stdev = 0.031
0.83
0.93
GS
at