IRFP32N50 IRF [International Rectifier], IRFP32N50 Datasheet - Page 7

• Manufacturer Part Number: IRFP32N50
• Description: Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)
• Manufacturer: IRF [International Rectifier]

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
Fig 14. For N-Channel HEXFET
GS
= 5V for Logic Level Devices
P.W.
SD
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
ƒ
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Current Transformer
Low Stray Inductance
Ground Plane
Low Leakage Inductance
D =
-
®
G
Power MOSFETs
Period
„
P.W.
+
V
V
I
SD
GS
DD
IRFP32N50K
=10V
+
-
V
DD
*
7