IRFP4232PBF_07 IRF [International Rectifier], IRFP4232PBF_07 Datasheet

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IRFP4232PBF_07

Manufacturer Part Number
IRFP4232PBF_07
Description
Advanced process technology
Manufacturer
IRF [International Rectifier]
Datasheet
Features
l
l
l
l
l
l
l
l
Description
Notes  through … are on page 8
www.irf.com
Absolute Maximum Ratings
V
V
I
I
I
I
P
P
T
T
Thermal Resistance
R
175°C operating junction temperature for
D
D
DM
RP
dissipation in Sustain & ER applications
reliable operation
and reliability
improved ruggedness
Advanced process technology
Key parameters optimized for PDP Sustain &
Low E
Low Q
High repetitive peak current capability for
Short fall & rise times for fast switching
Repetitive avalanche capability for robustness
J
STG
Energy Recovery applications
GS
GS
D
D
θJC
@ T
@ T
@ T
@T
@T
(TRANSIENT)
HEXFET
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
PULSE
G
= 100°C
for fast response
MOSFET
®
rating to reduce the power
Power MOSFET
Gate-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
f
Parameter
Parameter
g
MOSFET
PDP MOSFET
GS
GS
PULSE
@ 10V
@ 10V
V
V
R
E
I
T
RP
J
DS
DS (Avalanche)
PULSE
DS(ON)
G
max
max @ T
min
typ.
typ. @ 10V
typ.
C
Typ.
= 100°C
–––
Key Parameters
10lb
S
D
-40 to + 175
IRFP4232PbF
x
in (1.1N
Max.
240
117
430
210
300
±20
±30
2.9
60
42
x
m)
MOSFET
Max.
0.35
250
300
310
117
175
30
TO-247AC
Units
Units
W/°C
°C/W
°C
W
V
A
N
09/14/07
m
°C
µJ
V
V
A
1

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IRFP4232PBF_07 Summary of contents

Page 1

Features Advanced process technology l Key parameters optimized for PDP Sustain & l Energy Recovery applications Low E rating to reduce the power l PULSE dissipation in Sustain & ER applications Low Q for fast response l G High repetitive ...

Page 2

IRFP4232PbF Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage ...

Page 3

VGS TOP 15V 10V 8.0V BOTTOM 7.0V 100 7.0V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175°C T ...

Page 4

IRFP4232PbF 1600 L = 220nH 1400 C= 0.4µF 1200 C= 0.3µF C= 0.2µF 1000 800 600 400 200 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 12000 0V MHZ ...

Page 5

25°C 300 125°C 200 100 0 4.0 6.0 8 Gate-to-Source Voltage (V) Fig 13. On-Resistance Vs. Gate Voltage 5.5 5.0 4 250µA 4.0 3.5 3.0 ...

Page 6

IRFP4232PbF D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test ...

Page 7

Fig 21a. t and E Test Circuit st PULSE Fig 21c D.U. ≤ 1 ≤ 0.1 % Fig 22a. Switching Time Test Circuit www.irf.com Fig 21b. t Test Waveforms PULSE V DS 90% + ...

Page 8

IRFP4232PbF TO-247AC package is not recommended for Surface Mount Application. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.25mH 25Ω 42A ƒ Pulse ...

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