IRF840STR VISHAY [Vishay Siliconix], IRF840STR Datasheet
IRF840STR
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IRF840STR Summary of contents
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... I = 8.0 A (see fig. 12 ≤ 150 ° IRF840S, SiHF840S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF840STRRPbF a a SiHF840STR- IRF840STR a a SiHF840STR SYMBOL LIMIT V 500 DS V ± 8 5 1.0 0.025 E 510 AS I 8.0 AR ...
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IRF840S, SiHF840S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER ...
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91071 S-81432-Rev. A, 07-Jul- °C Fig Typical Transfer Characteristics C = 150 °C ...
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IRF840S, SiHF840S Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: ...
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Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91071 S-81432-Rev. A, 07-Jul-08 IRF840S, SiHF840S Vishay Siliconix D.U. ...
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IRF840S, SiHF840S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. ...
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D.U. Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...