IXFN56N90P_11 IXYS [IXYS Corporation], IXFN56N90P_11 Datasheet - Page 2

• Manufacturer Part Number: IXFN56N90P_11
• Description: Polar HiPerFET Power MOSFET
• Manufacturer: IXYS [IXYS Corporation]

Symbol
(T
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
Gi
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1.
I
V
Test Conditions
Resistive Switching Times
V
R
F
Test Conditions
V
Gate Input Resistance
V
V
V
Repetitive, Pulse Width Limited by T
I
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
F
R
= 0.5 • I
GS
DS
GS
G
GS
GS
= I
= 100V, V
= 10V, V
= 1Ω (External)
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
D25
= 0V, Note 1
, -di/dt = 100A/μs
GS
D
DS
DS
DS
= 0.5 • I
= 0V
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
27
Characteristic Values
Min.
Characteristic Values
Min.
1385
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
0.85
0.05
106
375
145
1.8
44
15
23
38
80
74
80
93
Typ.
0.125 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
224
300 ns
1.5
56
Max.
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B (IXFN) Outline
6,727,585
6,771,478 B2 7,071,537
(M4 screws (4x) supplied)
IXFN56N90P
7,005,734 B2
7,063,975 B2
7,157,338B2