IXFN340N07_04 IXYS [IXYS Corporation], IXFN340N07_04 Datasheet

IXFN340N07_04

Manufacturer Part Number

IXFN340N07_04

Description

Manufacturer

IXYS [IXYS Corporation]

Datasheet

1.IXFN340N07_04.pdf (5 pages)

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HiPerFET

Power MOSFETs

Single Die MOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

Symbol

dv/dt

Weight

Symbol

L(RMS)

GSS

D25

DSS

stg

GSM

GH(th)

DSS

DGR

ISOL

DSS

DS(on)

Test Conditions

Pulse test, t ≤ 300 μs,

duty cycle d ≤ 2 %

Test Conditions

Continuous

Transient

Terminal current limit

50/60 Hz, RMS

Mounting torque

Terminal connection torque

ISOL

≤ I

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

≤ 150°C, R

= 25°C

= 25°C, Chip capability

= 25°C, pulse width limited by T

= 25°C

≤ 1 mA

= 0 V, I

= V

= ±20 V

= V

= 0 V

= 10 V, I

, di/dt ≤ 100 A/μs, V

DSS

, I

= 3 mA

= 8 mA

, V

= 100A

= 2 Ω

t = 1 min

t = 1 s

= 0

= 1 MΩ

≤ V

= 25°C

= 125°C

= 25°C, unless otherwise specified)

DSS

IXFN 340N07

min.

2.0

Characteristic Values

-55 ... +150

Maximum Ratings

typ.

1.5/13 Nm/lb.in.

1360

2500

3000

340

100

±20

±30

200

700

150

max.

±200

100

4.0

V/ns

mΩ

μA

°C

Features

•

Applications

•

Advantages

•

G = Gate

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

miniBLOC, SOT-227 B (IXFN)

D25

International standard package

miniBLOC, with Aluminium nitride

isolation

Low R

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

Fast intrinsic Rectifier

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

Temperature and lighting controls

Linear current regulators

Easy to mount

Space savings

High power density

DSS

DS(on)

E153432

DS (on)

≤ ≤ ≤ ≤ ≤ 200 ns

= 340

HDMOS

D = Drain

4 mΩ Ω Ω Ω Ω

DS98547D(05/04)

process

Related parts for IXFN340N07_04

IXFN340N07_04 Summary of contents

Page 1

TM HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V ...

Page 2

Symbol Test Conditions 60A, pulse test iss MHz oss rss t d(on ...

Page 3

Fig. 1. Output Characteristics @ 25 Deg. C 240 V =10V GS 9V 200 8V 7V 160 120 0.3 0 Volts DS Fig. 3. Temperature Dependence of R DS(ON) 5 ...

Page 4

Fig. 7. Input Admittance 250 200 150 ° - 100 ° ° 125 2.5 3 3 Volts GS Fig. 9. Source Current vs. Source-To- Drain Voltage -240 ...

Page 5

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