IXFN280N07_08 IXYS [IXYS Corporation], IXFN280N07_08 Datasheet - Page 4

• Manufacturer Part Number: IXFN280N07_08
• Description: HiPerFET Power MOSFETs Single Die MOSFET
• Manufacturer: IXYS [IXYS Corporation]

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
10,000
1,000
1,000
140
120
100
80
60
40
20
100
0
10
2.5
1
0
External-Lead Limit
R
Fig. 11. Forward-Bias Safe Operating Area
DS(on)
T
T
Single Pulse
J
C
3.0
f
5
= 150ºC
= 25ºC
= 1 MHz
Limit
Fig. 7. Input Admittance
10
3.5
10ms
Fig. 9. Capacitance
15
V
V
V
GS
DS
4.0
DS
1ms
- Volts
- Volts
- Volts
10
T
20
DC
J
100µs
= 125ºC
4.5
- 40ºC
25ºC
25
25µs
5.0
30
C iss
C oss
C rss
5.5
35
100
6.0
40
1.000
0.100
0.010
0.001
130
120
110
100
90
80
70
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
0.0001
0
0
V
I
I
D
G
20
DS
Fig. 12. Maximum Transient Thermal
50
= 100A
= 10mA
= 35V
0.001
40
100
Fig. 8. Transconductance
Fig. 10. Gate Charge
Q
60
Pulse Width - Seconds
G
150
I
- NanoCoulombs
D
0.01
Impedance
- Amperes
80
200
100
IXFN280N07
0.1
250
IXYS REF: F_280N07(9X)4-01-08
120
T
125ºC
300
J
140
= - 40ºC
25ºC
1
350
160
10
180
400