SIGC42T170R3G_08 INFINEON [Infineon Technologies AG], SIGC42T170R3G_08 Datasheet
SIGC42T170R3G_08
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SIGC42T170R3G_08 Summary of contents
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IGBT Chip FEATURES: 1700V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling Chip Type V CE SIGC42T170R3G 1700V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / ...
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MAXIMUM RATINGS: Parameter Collector-emitter voltage = collector current, limited by T Pulsed collector current, t limited Gate emitter voltage Operating junction and storage temperature 1 ) depending on thermal properties of assembly STATIC ...
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CHIP DRAWING: Edited by INFINEON Technologies HV3, L7751B, Edition 1, 08.01.04 SIGC42T170R3G ...
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FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet DESCRIPTION: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation ...