SIGC144T170R2C_09 INFINEON [Infineon Technologies AG], SIGC144T170R2C_09 Datasheet - Page 2

• Manufacturer Part Number: SIGC144T170R2C_09
• Description: IGBT Chip in NPT-technology 1700V NPT technology 280 ?m chip
• Manufacturer: INFINEON [Infineon Technologies AG]

Maximum Ratings
Parameter
Collector-Emitter voltage, T
DC collector current, limited by T
Pulsed collector current, t
Gate emitter voltage
Junction temperature range
Operating junction temperature
Short circuit data
Reverse bias safe operating area
1 )
2 )
Static Characteristic (tested on wafer), T
Parameter
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
Dynamic Characteristic (not subject to production test - verified by design / characterization),
T
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Edited by INFINEON Technologies, AIM IMM, L7361M, Edition 2.1, 11.11.2009
vj
depending on thermal properties of assembly
not subject to production test - verified by design/characterization
=25 C
2 )
V
GE
= 15V, V
p
limited by T
vj
=25 C
CC
vj max
= 1200V,
2 )
(RBSOA)
vj max
vj
T
vj
=25 C
V
V
V
I
I
r
C
C
C
CES
GES
Symbol
G
Symbol
= 150°C
(BR)CES
CEsat
GE(th)
i e s
o e s
r e s
V
I
C
V
V
CE
V
=3.3mA , V
GE
CE
GE
=1700V , V
V
I
I
V
T
T
t
Conditions
Conditions
=0V , V
C
c , p u l s
S C
=0V , I
V
=15V, I
V
v j
v j
C E
G E
f=1MHz
C E
SIGC144T170R2C
Symbol
G E
=25V,
=0V ,
C
I
GE
= 5 mA
C , m a x
C
GE
=75A
=20V
GE
=V
=0V
CE
= 150A, V
T
vj
min.
1700
min.
2.2
4.5
-55 ... +175
-55...+150
1 5 0 °C
Value
1700
C E , m a x
225
10
1 )
20
typ.
Value
Value
5000
typ.
2.7
5.5
tbd
tbd
5
= 1700V
max.
max.
480
3.2
6.5
18
Unit
°C
µs
V
A
A
V
Unit
C
Unit
pF
µA
nA
V