GTS6923 GTM [GTM CORPORATION], GTS6923 Datasheet - Page 2

• Manufacturer Part Number: GTS6923
• Description: P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET
• Manufacturer: GTM [GTM CORPORATION]

Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Forward On Voltage
Continuous Source Current(
Schottky Characteristics @ Tj=25
Forward Voltage Drop
Max. Reverse Leakage Current
Notes: 1. Pulse width limited by Max. junction temperature.
GTS6923
3. Surface mounted on 1 in
2. Pulse width 300us, duty cycle 2% .
Parameter
Parameter
Parameter
2
2
2
Body Diode
:
:
2
)
2
copper pad of FR4 board; 208 /W when mounted on Min. copper pad.
Symbol
R
Symbol
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
I
DSS
g
Q
d(on)
d(off)
V
T
T
RM
I
oss
DSS
iss
rss
SD
fs
gs
gd
S
g
r
f
F
/
Tj
Min.
Min.
Min.
-0.5
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.03
Typ.
15.6
66.4
Typ.
Typ.
660
285
130
2.1
5.2
8.2
9.4
10
48
-
-
-
-
-
-
-
-
-
-
-
:
Max.
±100
-0.83
Max.
Max.
-1.2
-25
100
0.5
50
85
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
Unit
Unit
m
nC
nA
uA
uA
pF
ns
uA
V
V
S
V
V
A
V
Reference to 25 , I
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
I
V
I
V
D
D
S
F
GS
DS
DS
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
D
R
=-3.5A
=-1A
=-0.83A, V
=1A
=10
= V
=20V
=3.3
=0, I
=V
=-10V, I
= ±12V
=-20V, V
=-16V, V
=-4.5V, I
=-2.5V, I
=-10V
=-4.5V
=-10V
=-4.5V
=0V
=-20V
Test Conditions
Test Conditions
Test Conditions
ISSUED DATE :2006/05/04
REVISED DATE :
G
GS
=0V, V
D
, I
=-250uA
D
D
=-250uA
D
D
GS
GS
GS
=-3.5A
=-3.5A
=-2.7A
S
=0
=0
=0V
=-1.2V
Page: 2/4
:
D
=-1mA