GTS217E GTM [GTM CORPORATION], GTS217E Datasheet - Page 2

• Manufacturer Part Number: GTS217E
• Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: GTM [GTM CORPORATION]

Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=55 : )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Continuous Source Current (
Notes: 1. Pulse width limited by Max. junction temperature.
GTS217E
3. Surface mounted on FR4 board, t 10sec.
2. Pulse width 300us, duty cycle 2%.
Parameter
Parameter
2
2
2
2
Body Diode
)
Symbol
R
Symbol
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
g
Q
d(on)
d(off)
Q
T
T
T
I
oss
DSS
iss
rss
SD
fs
gs
gd
S
g
r
f
rr
rr
Min.
Min.
0.5
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
820
934
860
510
231
164
137
15.2
9.3
0.6
3.6
6.3
24
-
-
-
-
-
-
-
-
-
Max.
Max.
±10
1.0
1.0
2.5
22
30
1
5
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Unit
m
nC
uA
uA
uA
pF
nC
ns
ns
V
V
S
V
A
V
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/ s
V
D
D
S
S
GS
DS
DS
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
L
D
=7A
=1A
=1.0A, V
=7A, V
=10
=V
=6
=0, I
=V
=5V, I
= ±10V
=16V, V
=16V, V
=4.5V, I
=2.5V, I
=10V
=4.5V
=10V
=4.5V
=0V
=10V
Test Conditions
Test Conditions
G
ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
GS
=0V, V
D
GS
, I
D
=250uA
GS
=7A
D
=0V
D
D
GS
GS
=250uA
=6.6A
=5.5A
=0V
S
=0
=0
=1.0V
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