EPC130 EPC [Espros Photonics corp], EPC130 Datasheet - Page 6

• Manufacturer Part Number: EPC130
• Description: Photo-receiver Amplifier
• Manufacturer: EPC [Espros Photonics corp]

© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
Application Information
Light Barrier Application
The following circuit is recommended to operate the epc130/131 as a photo diode amplifier in a single beam light barrier:
Recommended Components Values
R1: 27k for epc130 and 4.7k for epc131 (bias resistor). Sensitivity can be reduced by the reduction of this resistor.
R2: dependent on the required LED current
C1: Usually not needed. May be up to 100 pF (refer to section 'Photodiode Capacitance').
C2: 33nF (DC input current filter capacitor)
C3: 100nF or more (power supply filter capacitor)
D1: PIN photo diode, epc3xx-family or similar devices
D2: IR LED, TSML1000 (Vishay) or similar devices
Working Principle
The IR LED D2 emits light pulses which are sent towards the photo diode D1. If there is no obstacle between the two devices, the light pulse
generates an AC current (I
rent pulse is transformed to a voltage amplified. Once a light pulse is generated by the IR LED, a next light pulse must not be generated until
the recovery time t
Design Precautions
The sensitivity at pin PD is very high in order to achieve a long operation range of light barriers even without lenses in front of the IR LED
and/or the photo diode. Thus, the pin PD is very sensitive to EMI. Special care should be taken to keep the PCB
track at pin PD as short as possible (a few mm only!). This track should be kept away from the IR LED signal tracks
and from other sources which may induce unwanted signals. It is strongly recommended to cover the chip, the pho -
todiode and all passive components around the chip with a metal shield. A recommended part is shown in the follow -
ing figure:
The pins at the bottom are to solder the shield to the PCB with electrical connection to VDD. The hole in the front is
the opening window for the photo diode. The back side of the PCB below the sensitive area (D1, C1, R1, epc13x)
shall be a polygon connected to VDD to shield the circuit from the back side. C1 must be of high mechanical stability
(no piezoelectric effect) in order to avoid unwanted signals by mechanical shock or vibration.
Ambient Light
Photodiode DC current can be generated by ambient light, e.g. sun light. DC currents at pin PD do not generate a DC output signal. Thus, the
offset voltage V
pulses.
Photodiode Capacitance
If the photodiode capacitance is below the specified value, the system becomes more sensitive to power supply ripple voltage at higher fre -
quencies (>200kHz). This sensitivity can be reduced by a parallel capacitor to the photodiode. However, this measure reduces the detection
sensitivity. If the photo diode capacity is above the specified value, a lower detection sensitivity and a possible higher sensitivity spread re -
sults.
OF
remains constant. However, if I
REC
GND LED
+VLED
(max.).
D2
R2
Type
T1
PD
) in the reverse biased photo diode D1 into the pin PD. I
from digital
oscillator or
μC output
Light path
PDDC
is above the stated value, the input is saturated which blocks the detection of AC current
D1
C1
C2
R1
6
PD
CN
epc13x
VDD
VSS
PD
is proportional to the power of the light pulse. The cur-
OUT
VN
C3
analog
output to μC
Datasheet epc13x analog - V2.1
epc130/epc131
Recommended EMC
www.espros.ch
shield