AGR09030E TRIQUINT [TriQuint Semiconductor], AGR09030E Datasheet - Page 2

• Manufacturer Part Number: AGR09030E
• Description: 30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
• Manufacturer: TRIQUINT [TriQuint Semiconductor]

30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
Table 4. dc Characteristics
Table 5. RF Characteristics
Drain-source Breakdown Voltage (V
Gate-source Leakage Current (V
Zero Gate Voltage Drain Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Gate Quiescent Voltage (V
Drain-source On-voltage (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Linear Power Gain
Output Power
Drain Efficiency
Third-order Intermodulation Distortion
Input Return Loss
Ruggedness
(V
(V
(V
(V
(V
(V
(100 kHz spacing, V
(V
VSWR = 10:1, all angles)
DS
DS
DS
DS
DS
DS
DS
= 28 Vdc, V
= 28 Vdc, V
= 28 Vdc, V
= 28 V, P
= 28 V, 1 dB compression, I
= 28 V, P
= 28 V, P
OUT
OUT
OUT
GS
GS
GS
= 5 W, I
= P1dB, I
= 30 W, I
DS
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 28 V, P
Functional Tests (in Agere Systems Supplied Test Fixture)
DS
DS
GS
DQ
Parameter
Parameter
DQ
= 10 V, I
= 28 V, I
DQ
DS
= 10 V, I
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
= 330 mA)
= 330 mA, f = 880 MHz,
GS
= 330 mA)
= 10 V, I
OUT
DQ
GS
= 5 V, V
= 330 mA)
D
DQ
= 30 WPEP, I
D
= 0, I
= 400 µA)
= 1.0 A)
= 330 mA)
D
= 1.0 A)
DS
D
Dynamic Characteristics
(in Supplied Test Fixture)
DS
= 100 µA)
Off Characteristics
= 0 V)
On Characteristics
= 28 V, V
150
DQ
= 330 mA)
GS
= 0 V)
Symbol
C
V
Symbol
V
V
V
P1dB
C
(BR)DSS
C
= 30 °C.
C
IMD
GS(TH)
DS(ON)
I
I
G
GS(Q)
G
I
GSS
DSS
—
RSS
OSS
RL
ISS
FS
L
No degradation in output power.
Min
19
30
—
—
—
—
—
—
Min
65
—
—
—
—
—
—
15.7
0.73
Typ
–31
0.35
56
21
40
57
10
Typ
2.2
3.8
—
—
—
—
Max
Max
0.95
—
50
—
—
—
—
—
—
—
2.9
5.0
—
—
—
—
µAdc
µAdc
Unit
Unit
dBc
Vdc
Vdc
Vdc
Vdc
dB
dB
pF
pF
pF
W
%
S