K9F2808U0C-DCB0 Samsung semiconductor, K9F2808U0C-DCB0 Datasheet - Page 27

• Manufacturer Part Number: K9F2808U0C-DCB0
• Description: 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F2808Q0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0
R/B
I/Ox
RE
CLE
CE
WE
ALE
R/B
I/Ox
Figure 9. Read2 Operation
Figure 8-1. Sequential Row Read1 Operation (only for K9F2808U0C-Y,P and K9F2808U0C-V,F valid wihin a block )
Block
X16 device : A
X8 device : A
00h
01h
1st half array
(GND input=L, 00h Command)
50h
3
4
~ A
~ A
Data Field
X16 device : A
7
X8 device : A
7
are "L"
Don’ t care
Start Add.(3Cycle)
A
Start Add.(3Cycle)
0
~ A
2nd half array
7
& A
K9F2816Q0C-DCB0,DIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-DCB0,DIB0
0
0
9
Spare Field
~ A
~ A
~ A23
2
3
& A
& A
9
9
1st
2nd
Nth
~ A23
~ A23
t
R
t
R
1st half array
Data Field
Data Output
(GND input=L, 01h Command)
Main array
1st
On K9F2808U0C_Y,P or K9F2808U0C_V ,F
CE must be held
Data Field
low during tR
27
K9F2808U0C-VCB0,VIB0
2nd half array
Spare Field
t
R
Spare Field
Data Output
(528 Byte)
1st
2nd
Nth
Data Output(Sequential)
2nd
Spare Field
1st half array
(GND input=H, 00h Command)
FLASH MEMORY
t
Data Field
R
2nd half array
Data Output
(528 Byte)
Spare Field
Nth
1st
2nd
Nth