K9F2808U0C-DCB0 Samsung semiconductor, K9F2808U0C-DCB0 Datasheet - Page 18

• Manufacturer Part Number: K9F2808U0C-DCB0
• Description: 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F2808Q0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0
System Interface Using CE don’ t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte/264word page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addi-
tion, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading
and reading would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’ t-care.
CLE
CE
WE
ALE
Figure 7. Read Operation with CE don’ t-care.
CE
WE
I/Ox
R/B
WE
CLE
ALE
CE
RE
I/Ox
t
CS
00h
80h
Start Add.(3Cycle)
Start Add.(3Cycle)
t
K9F2816Q0C-DCB0,DIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-DCB0,DIB0
WP
On K9F2808U0C_Y,P or K9F2808U0C_V,F
CE must be held
low during tR
t
CH
t
R
Data Input
18
K9F2808U0C-VCB0,VIB0
I/O
CE
RE
0
~
15
CE don’ t-care
CE don’ t-care
t
Data Output(sequential)
CEA
t
REA
FLASH MEMORY
Data Input
out
10h