2SB1132-P-AB3-R UTC [Unisonic Technologies], 2SB1132-P-AB3-R Datasheet - Page 2

• Manufacturer Part Number: 2SB1132-P-AB3-R
• Description: MEDIUM POWER TRANSISTOR
• Manufacturer: UTC [Unisonic Technologies]

2SB1132
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current ( Single pulse, Pw=100ms )
Collector Power Dissipation
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Note: Measured using pulse current.
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
RANGE
RANK
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
FE
82-180
SYMBOL
V
BV
BV
BV
P
CE(SAT)
Cob
I
I
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
DC
PULSE
SOT-89
TO-252
(Ta=25 ° C, unless otherwise specified)
I
I
I
V
V
I
V
V
V
(Ta=25 ° C, unless otherwise specified)
C
C
E
C
CB
EB
CE
CE
CB
= -50µA
= -50µA
= -1mA
= -500mA,I
= -20V
= -4V
= -3V,I
= -5V, I
= -10V, I
TEST CONDITIONS
C
E
SYMBOL
= -0.1A (Note)
= 50 mA, f=30MHz
E
B
= 0A,f=1MHz
V
V
V
T
= -50mA (Note)
P
T
CBO
CEO
I
STG
EBO
C
C
J
120-270
Q
PNP SILICON TRANSISTOR
-55 ~ +150
RATINGS
150
-40
-32
0.5
MIN
-5
-1
-2
-40
-32
1
82
-5
TYP
-0.2
150
20
180-390
R
MAX
-0.5
-0.5
-0.5
390
QW-R208-016,B
30
UNIT
2 of 4
° C
° C
W
W
UNIT
V
V
V
A
A
MHz
µA
µA
pF
V
V
V
V