AM29PL320D SPANSION [SPANSION], AM29PL320D Datasheet - Page 49

• Manufacturer Part Number: AM29PL320D
• Description: 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
• Manufacturer: SPANSION [SPANSION]

REVISION SUMMARY
Revision A (March 7, 2001)
Initial release.
Revision B (June 12, 2001)
Global
Added 70R speed option.
Changed data sheet status from Advance Information
to Preliminary.
Distinctive Characteristics
SecSi Sector: Added note to future compatibility.
Power Consumption: Replaced stated maximum val-
ues with typical values.
General Description
Added section on SecSi Sector.
SecSi™ (Secured Silicon) Sector Flash
Memory Region
Added note to indicate sector size and erase function-
ality for future devices.
DC Characteristics
Added typical values for I
V
Figure 10, Typical I
Changed scale on Y-axis to 4 mA divisions.
Revision B+1 (August 30, 2001)
Autoselect Command Sequence
Modified section to point to appropriate tables for au-
toselect functions.
Accelerated Program Operation
Specified a voltage range for V
Table 13, Command Definitions
Corrected the autoselect device ID command se-
quence. The device ID is read in cycles 4, 5, and 6 of a
single command sequence, not as three separate
command sequences as previously shown. Separated
the word and double word command sequences into
two tables for easier reference.
DC Characteristics
Added V
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
October 2, 2003
IN
test condition specification to V
HH
parameter to table.
CC1
vs. Frequency
CC1
–I
HH
CC5
.
CC
to table. Corrected
.
Am29PL320D
Revision C (October 22, 2002)
Global
Deleted preliminary status from data sheet.
Distinctive Characteristics
Clarified endurance specification from “write cycles” to
“erase cycles.”
SecSi™ (Secured Silicon) Sector Flash
Memory Region
Added text and figure on SecSi Sector Protect Verify
function.
Command Definitions
Modified first paragraph to indicate device behavior
when incorrect data or commands are written.
DC Characteristics
Changed V
test condition for V
BGA Ball Capacitance
Added table.
Revision C+1 (July 21, 2003)
Common Flash Interface (CFI)
Changed URL for CFI publications.
Command Definitions
Added the phrase “in the improper sequence” to cau-
tionary text in first paragraph.
Erase and Programming Performance
Changed typical sector erase time and typical chip
erase time. Added typical and maximum sector erase
times pertaining to 8 and 16 Kword sectors.
Revision C+2 (October 2, 2003)
Erase Suspend/Erase Resume Commands
Modified text to “Note that unlock bypass programming
is not allowed when the device is erase-suspended” in
the third paragraph.
AC Characteristics - Double Word/Word
Configuration (WORD#) diagram
Modified all instances of DQ14 to DQ30, DQ7 to
DQ15, and DQ15 to DQ31.
IL
maximum specification. Changed V
ID
parameter.
47
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