AM29PL320D SPANSION [SPANSION], AM29PL320D Datasheet - Page 18

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AM29PL320D

Manufacturer Part Number
AM29PL320D
Description
32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
Manufacturer
SPANSION [SPANSION]
Datasheet

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16
(Double Word
(Double Word
Addresses
Addresses
Mode)
Mode)
1Bh
1Ch
1Dh
1Eh
2Ah
2Bh
2Ch
2Dh
2Eh
3Ah
3Bh
3Ch
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
(Word Mode)
(Word Mode)
Addresses
Addresses
3Ch
4Ch
5Ch
6Ch
36h
38h
3Ah
3Eh
40h
42h
44h
46h
48h
4Ah
4Eh
50h
52h
54h
56h
58h
5Ah
5Eh
60h
62h
64h
66h
68h
6Ah
6Eh
70h
72h
74h
76h
78h
Table 11. Device Geometry Definition
000Ah
000Eh
0027h
0036h
0000h
0000h
0004h
0000h
0000h
0005h
0000h
0006h
0000h
0016h
0005h
0000h
0000h
0000h
0004h
0000h
0000h
0080h
0000h
0001h
0000h
0040h
0000h
0000h
0000h
0000h
0003h
0000h
0000h
0004h
Table 10. System Interface String
Data
Data
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
V
Typical timeout per single word/double word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for word/ double word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of bytes in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Am29PL320D
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase), D7–D4: volt, D3–D0: 100 millivolt
N
byte
PP
Description
Description
PP
N
times typical
input present)
N
input present)
N
times typical (00h = not supported)
ms (00h = not supported)
N
N
N
N
times typical
µs (00h = not supported)
N
times typical
ms
N
µs
October 2, 2003

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