AM29PDL129H AMD [Advanced Micro Devices], AM29PDL129H Datasheet - Page 46

• Manufacturer Part Number: AM29PDL129H
• Description: 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO
• Manufacturer: AMD [Advanced Micro Devices]

AC CHARACTERISTICS
44
Notes:
1.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
4. During CE1# transitions, CE2#= V
Figure indicates last two bus cycles of a program or erase operation.
CE1# or CE2#
Addresses
RESET#
RY/BY#
Figure 23. Alternate CE# Controlled Write (Erase/Program) Operation Timings
WE#
Data
OE#
t
RH
IH
555 for program
2AA for erase
; During CE2# transitions, CE1#= V
t
t
t
WS
WC
WH
A0 for program
55 for erase
t
GHEL
t
t
t
DS
CP
PA for program
SA for sector erase
555 for chip erase
CPH
t
AS
t
DH
Am29PDL129H
OUT
t
AH
is the data written to the device.
PD for program
30 for sector erase
10 for chip erase
IH
t
BUSY
t
WHWH1 or 2
Data# Polling
DQ7#
PA
D
OUT
November 2, 2005