AM29LV642D AMD [Advanced Micro Devices], AM29LV642D Datasheet - Page 26

• Manufacturer Part Number: AM29LV642D
• Manufacturer: AMD [Advanced Micro Devices]

24
Addresses (x16)
Addresses (x16)
1Bh
1Ch
1Dh
1Eh
1Fh
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
3Ah
3Bh
3Ch
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
0030h
0036h
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
0017h
0000h
0000h
0000h
0000h
0001h
007Fh
0000h
0000h
0001h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Data
Data
Table 8. Device Geometry Definition
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of words in multi-word write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information (refer to CFI publication 100)
Erase Block Region 3 Information (refer to CFI publication 100)
Erase Block Region 4 Information (refer to CFI publication 100)
Table 7. System Interface String
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
D A T A
Am29LV642D
N
word
S H E E T
PP
N
PP
N
times typical
times typical
pin present)
pin present)
N
times typical (00h = not supported)
N
Description
Description
ms (00h = not supported)
N
µs
N
N
times typical
N
µ
s (00h = not supported)
ms
N
25022A2 May 5, 2006