MT41J256M16HA-125:E Micron Semiconductor Products, MT41J256M16HA-125:E Datasheet - Page 8

• Manufacturer Part Number: MT41J256M16HA-125:E
• Manufacturer: Micron Semiconductor Products

Specifications of MT41J256M16HA-125:E

• Pack_quantity: 1000
• Comm_code: 85423239
• Lead_time: 84
• Eccn: EAR99

4Gb: x4, x8, x16 DDR3 SDRAM
Features
Figure 103: Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 191
Figure 104: Dynamic ODT: Without WRITE Command .................................................................................. 191
Figure 105: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 192
Figure 106: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 193
Figure 107: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 193
Figure 108: Synchronous ODT ...................................................................................................................... 195
Figure 109: Synchronous ODT (BC4) ............................................................................................................. 196
Figure 110: ODT During READs .................................................................................................................... 198
Figure 111: Asynchronous ODT Timing with Fast ODT Transition .................................................................. 200
Figure 112: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 202
Figure 113: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 204
Figure 114: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 206
Figure 115: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 206
PDF: 09005aef8417277b
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4Gb_DDR3_SDRAM.pdf - Rev.J 6/12 EN
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