MT46H16M16LFBF-6 IT Micron Semiconductor Products, MT46H16M16LFBF-6 IT Datasheet
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MT46H16M16LFBF-6 IT
Manufacturer Part Number
MT46H16M16LFBF-6 IT
Description
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H16M16LF.pdf
(79 pages)
- Current page: 1 of 79
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Mobile DDR SDRAM
MT46H16M16LF – 4 Meg x 16 x 4 banks
MT46H8M32LF/LG – 2 Meg x 32 x 4 banks
For the latest data sheet, refer to Micron’s Web site: www.micron.com
Features
• V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• Four internal banks for concurrent operation
• Data masks (DM) for masking write data—one mask
• Programmable burst lengths: 2, 4, or 8
• Concurrent auto precharge option supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS compatible inputs
• On-chip temperature sensor to control self refresh
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Selectable output drive (DS)
• Clock stop capability
• 64ms refresh period
Table 1:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__1.fm - Rev. H 3/08 EN
Width
architecture; two data accesses per clock cycle
aligned with data for WRITEs
per byte
rate
Bus
DQ
x16
x32
DD/
V
DD
Number of banks
Bank address balls
Row address balls
Column address balls
Row address balls
Column address balls
Q = 1.70–1.95V
Architecture
Configuration Addressing
Products and specifications discussed herein are subject to change by Micron without notice.
Standard
BA0, BA1
A0–A12
A0–A11
JEDEC-
Option
A0–A8
A0–A8
4
Page-Size
Reduced
BA0, BA1
Option
A0–A12
A0–A7
4
–
–
1
Table 2:
Notes: 1. Only available for x16 configuration.
Options
• V
• Configuration
• Row size option
• Plastic “green” packages
• Timing – cycle time
• Power
• Operating temperature range
• Design revision
– 1.8V/1.8V
– 16 Meg x 16 (4 Meg x 16 x 4 banks)
– 8 Meg x 32 (2 Meg x 32 x 4 banks)
– JEDEC-standard option
– Reduced page-size option
– 60-ball VFBGA 8mm x 9mm
– 90-ball VFBGA 8mm x 13mm
– 6ns at CL = 3
– 7.5ns at CL = 3
– Standard
– Low I
– Commercial (0°C to +70°C)
– Industrial (–40°C to +85°C)
Speed
Grade
DD
-75
-6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
/V
256Mb: x16, x32 Mobile DDR SDRAM
2. Only available for x32 configuration.
DD
DD
Q
2P/I
Key Timing Parameters
CL = 2
Clock Rate (MHz)
83.3
83.3
DD
6
CL = 3
166
133
©2005 Micron Technology, Inc. All rights reserved.
2
1
2
CL = 2
6.5ns
6.5ns
Access Time
Marking
Features
16M16
8M32
None
None
CL = 3
-75
LG
LF
BF
B5
5.0ns
6.0ns
-6
IT
:A
H
L
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