MT48H8M32LFB5-75 IT:G Micron Semiconductor Products, MT48H8M32LFB5-75 IT:G Datasheet
MT48H8M32LFB5-75 IT:G
Manufacturer Part Number
MT48H8M32LFB5-75 IT:G
Description
Mobile SDRAM 8Mx32, 133MHz, 1.8V, FBGA90, ind. Temp, leadfree
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT48H8M32LFB5-75_ITG.pdf
(86 pages)
Specifications of MT48H8M32LFB5-75 IT:G
Package
T&R/USA
Unit
1000
Date_code
07+
- Current page: 1 of 86
- Download datasheet (3Mb)
Mobile Low-Power SDR SDRAM
MT48H16M16LF – 4 Meg x 16 x 4 banks
MT48H8M32LF – 2 Meg x 32 x 4 banks
Features
• V
• Fully synchronous; all signals registered on positive
• Internal, pipelined operation; column address can
• Four internal banks for concurrent operation
• Programmable burst lengths: 1, 2, 4, 8, and continu-
• Auto precharge, includes concurrent auto precharge
• Auto refresh and self refresh modes
• LVTTL-compatible inputs and outputs
• On-chip temperature sensor to control self refresh
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Selectable output drive strength (DS)
• 64ms refresh period
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. J 09/10 EN
edge of system clock
be changed every clock cycle
ous
rate
DD
/V
DDQ
= 1.7–1.95V
Products and specifications discussed herein are subject to change by Micron without notice.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
1
Table 1: Configuration Addressing
Table 2: Key Timing Parameters
Architecture
Number of banks
Bank address balls
Row address balls
Column address balls
Notes:
Options
• V
• Addressing
• Configuration
• Plastic “green” packages
• Timing – cycle time
• Operating temperature range
• Revision
Note:
Speed
Grade
– Standard addressing option
– 16 Meg x 16 (4 Meg x 16 x 4 banks)
– 8 Meg x 32 (2 Meg x 32 x 4 banks)
– 54-ball VFBGA (8mm x 9mm)
– 90-ball VFBGA (8mm x 13mm)
– 6ns @ CL = 3
– 7.5ns @ CL = 3
– Commercial (0˚C to +70˚C)
– Industrial (–40˚C to +85˚C)
-75
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
-6
/V
1. Available only for x16 configuration.
2. Available only for x32 configuration.
1. CL = CAS (READ) latency
DDQ
: 1.8V/1.8V
Clock Rate (MHz)
CL = 2
104
104
16 Meg x 16
BA0, BA1
A[12:0]
CL = 3
A[8:0]
166
133
© 2008 Micron Technology, Inc. All rights reserved.
4
1
CL = 2
2
8.0ns
8.0ns
Access Time
8 Meg x 32
BA0, BA1
A[11:0]
Features
A[8:0]
Marking
4
16M16
CL = 3
8M32
None
5.0ns
5.4ns
-75
LF
BF
B5
:H
-6
IT
H
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