MT46H32M16LFBF-6LIT:B Micron Semiconductor Products, MT46H32M16LFBF-6LIT:B Datasheet

MT46H32M16LFBF-6LIT:B

Manufacturer Part Number

MT46H32M16LFBF-6LIT:B

Description

Manufacturer

Micron Semiconductor Products

Datasheet

1.MT46H32M16LFBF-6LITB.pdf (98 pages)

Specifications of MT46H32M16LFBF-6LIT:B

Lead_time

2 weeks

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

MT46H32M16LFBF-6LIT:B

Quantity:

7 648

Current page: 1 of 98
Download datasheet (4Mb)

Mobile Low-Power DDR SDRAM

MT46H32M16LF – 8 Meg x 16 x 4 Banks

MT46H16M32LF – 4 Meg x 32 x 4 Banks

Features

• V

• 1.2V I/O option V

• Bidirectional data strobe per byte of data (DQS)

• Internal, pipelined double data rate (DDR)architec-

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs;center-

• 4 internal banks for concurrent operation

• Data masks (DM) for masking write data—one mask

• Programmable burst lengths (BL): 2, 4, 8, or 16

• Concurrent auto precharge option is supported

• Auto refresh and self refresh modes

• 1.8V LVCMOS-compatible inputs

• On-chip temp sensor to control self refresh rate

• Partial-array self refresh (PASR)

• Deep power-down (DPD)

• Status read register (SRR)

• Selectable output drive strength (DS)

• Clock stop capability

• 64ms refresh

PDF: 09005aef82d5d305

512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN

ture; two data accesses per clock cycle

aligned with data for WRITEs

per byte

Table 1: Key Timing Parameters (CL = 3)

Speed Grade

DDQ

-54

-75

-5

-6

= 1.70–1.95V

Products and specifications discussed herein are subject to change by Micron without notice.

DDQ

Clock Rate (MHz)

= 1.14–1.30V

200

185

166

133

Access Time

5.0ns

6.0ns

512Mb: x16, x32 Mobile LPDDR SDRAM

Notes:

Options

• V

• Configuration

• Row-size option

• Plastic green package

• Timing – cycle time

• Power

• Operating temperature range

• Design revision

– 1.8V/1.8V

– 1.8V/1.2V

– 32 Meg x 16 (8 Meg x 16 x 4 banks)

– 16 Meg x 32 (4 Meg x 32 x 4 banks)

– JEDEC-standard option

– Reduced page-size option

– 60-ball VFBGA (8mm x 9mm)

– 90-ball VFBGA (10mm x 13mm)

– 90-ball VFBGA (9mm x 13mm)

– 5ns @ CL = 3

– 5.4ns @ CL = 3

– 6ns @ CL = 3

– 7.5ns @ CL = 3

– Standard I

– Low-power I

– Commercial (0˚ to +70˚C)

– Industrial (–40˚C to +85˚C)

Micron Technology, Inc. reserves the right to change products or specifications without notice.

1. Contact factory for availability.

2. Only available for x16 configuration.

3. Only available for x32 configuration.

DDQ

DD2

DD6

Marking

Features

32M16

16M32

None

-54

-75

-5

-6

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