CY7C1480BV33-250AXI Cypress Semiconductor Corporation., CY7C1480BV33-250AXI Datasheet

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CY7C1480BV33-250AXI

Manufacturer Part Number
CY7C1480BV33-250AXI
Description
Manufacturer
Cypress Semiconductor Corporation.

Specifications of CY7C1480BV33-250AXI

Package
QFP
Date_code
09+
Features
Selection Guide
Cypress Semiconductor Corporation
Document #: 001-15145 Rev. *A
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Supports bus operation up to 250 MHz
Available speed grades are 250, 200, and 167 MHz
Registered inputs and outputs for pipelined operation
3.3V core power supply
2.5V/3.3V IO operation
Fast clock-to-output times
Provide high performance 3-1-1-1 access rate
User selectable burst counter supporting Intel
Pentium
Separate processor and controller address strobes
Synchronous self timed writes
Asynchronous output enable
Single cycle chip deselect
CY7C1480BV33, CY7C1482BV33 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non Pb-free 165-ball FBGA package. CY7C1486BV33
available in Pb-free and non-Pb-free 209-ball FBGA package
IEEE 1149.1 JTAG-Compatible Boundary Scan
“ZZ” Sleep Mode option
3.0 ns (for 250 MHz device)
®
interleaved or linear burst sequences
Description
®
198 Champion Court
72-Mbit (2M x 36/4M x 18/1M x 72)
Functional Description
The CY7C1480BV33, CY7C1482BV33, and CY7C1486BV33
SRAM integrates 2M x 36/4M x 18/1M × 72 SRAM cells with
advanced synchronous peripheral circuitry and a 2-bit counter
for internal burst operation. All synchronous inputs are gated by
registers controlled by a positive-edge-triggered Clock Input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining Chip Enable (CE
Chip Enables (CE
ADSP, and ADV), Write Enables (BW
Write (GW). Asynchronous inputs include the Output Enable
(OE) and the ZZ pin.
Addresses and chip enables are registered at the rising edge of
the clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent burst
addresses may be internally generated as controlled by the
Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self timed write cycle.This part supports byte write
operations (see sections
Table
two or four bytes wide as controlled by the byte write control
inputs. GW when active LOW causes all bytes to be written.
The CY7C1480BV33, CY7C1482BV33, and CY7C1486BV33
operates from a +3.3V core power supply while all outputs may
operate with either a +2.5 or +3.3V supply. All inputs and outputs
are JEDEC standard JESD8-5 compatible. For best practices
recommendations, refer to the Cypress application note
“SRAM System Guidelines”.
250 MHz
500
120
3.0
on page 10 for further details). Write cycles can be one to
CY7C1482BV33, CY7C1486BV33
San Jose
Pipelined Sync SRAM
200 MHz
2
500
120
,
and CE
3.0
CA 95134-1709
Pin Definitions
3
), Burst Control inputs (ADSC,
167 MHz
CY7C1480BV33
450
120
3.4
X
Revised March 05, 2008
, and BWE), and Global
on page 7 and
1
), depth-expansion
408-943-2600
Unit
mA
mA
ns
AN1064
Truth
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