CY7C1480BV25-200AXC Cypress Semiconductor Corporation., CY7C1480BV25-200AXC Datasheet

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CY7C1480BV25-200AXC

Manufacturer Part Number
CY7C1480BV25-200AXC
Description
Manufacturer
Cypress Semiconductor Corporation.

Specifications of CY7C1480BV25-200AXC

Package
QFP
Date_code
09+
Features
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Selection Guide
Note
Cypress Semiconductor Corporation
Document #: 001-15143 Rev. *D
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
1. For best practices recommendations, refer to the Cypress application note
Supports bus operation up to 250 MHz
Available speed grades are 250, 200, and 167 MHz
Registered inputs and outputs for pipelined operation
2.5V core power supply
2.5V IO operation
Fast clock-to-output time
Ë
Provide high performance 3-1-1-1 access rate
User selectable burst counter supporting Intel
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self timed writes
Asynchronous output enable
Single cycle chip deselect
CY7C1480BV25, CY7C1482BV25 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-ball FBGA package. CY7C1486BV25
available in Pb-free and non-Pb-free 209-ball FBGA package
IEEE 1149.1 JTAG-Compatible Boundary Scan
“ZZ” Sleep Mode option
3.0 ns (for 250 MHz device)
Description
®
198 Champion Court
Pentium
®
AN1064, SRAM System
72-Mbit (2M x 36/4M x 18/1M x 72)
Functional Description
The
SRAM integrates 2M x 36/4M x 18/1M × 72 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit counter
for internal burst operation. All synchronous inputs are gated by
registers controlled by a positive-edge-triggered Clock Input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining Chip Enable (CE
Chip Enables (CE
ADSP, and ADV), Write Enables (BW
Write (GW). Asynchronous inputs include the Output Enable
(OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or Address
Strobe Controller (ADSC) is active. Subsequent burst addresses
can be internally generated as controlled by the Advance pin
(ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self timed Write cycle. This part supports Byte Write
operations (see
page 10
bytes wide, as controlled by the byte write control inputs. When
it is active LOW, GW writes all bytes.
250 MHz
450
120
3.0
CY7C1482BV25, CY7C1486BV25
for further details). Write cycles can be one to two or four
CY7C1480BV25/CY7C1482BV25/CY7C1486BV25
San Jose
Guidelines.
“Pin Definitions” on page 7
200 MHz
2
450
120
3.0
,
and CE
Pipelined Sync SRAM
CA 95134-1709
3
), Burst Control inputs (ADSC,
167 MHz
CY7C1480BV25
Revised February 29, 2008
400
120
3.4
X
, and BWE), and Global
and
1
), depth-expansion
“Truth Table” on
408-943-2600
Unit
mA
mA
ns
[1]
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