AM29LV800BB120EC Advanced Micro Devices, AM29LV800BB120EC Datasheet

AM29LV800BB120EC

Manufacturer Part Number

AM29LV800BB120EC

Description

TSOP48

Manufacturer

Advanced Micro Devices

Datasheets

1.AM29LV800BB120EC.pdf (42 pages)

2.AM29LV800BB120EE.pdf (45 pages)

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Am29LV800B

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write

— Regulated voltage range: 3.0 to 3.6 volt read

Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29LV800 device

High performance

— Full voltage range: access times as fast as 80 ns

— Regulated voltage range: access times as fast

Ultra low power consumption (typical values at

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

— One 8 Kword, two 4 Kword, one 16 Kword, and

— Supports full chip erase

— Sector Protection features:

operations for battery-powered applications

and write operations and for compatibility with

high performance 3.3 volt microprocessors

as 70 ns

fifteen 64 Kbyte sectors (byte mode)

fifteen 32 Kword sectors (word mode)

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

PRELIMINARY

Refer to AMD’s Website (www.amd.com) for the latest information.

Unlock Bypass Program Command

— Reduces overall programming time when

Top or bottom boot block configurations

available

Embedded Algorithms

— Embedded Erase algorithm automatically

— Embedded Program algorithm automatically

Minimum 1,000,000 write cycle guarantee per

sector

Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

Compatibility with JEDEC standards

— Pinout and software compatible with single-

— Superior inadvertent write protection

Data# Polling and toggle bits

— Provides a software method of detecting

Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

issuing multiple program command sequences

preprograms and erases the entire chip or any

combination of designated sectors

writes and verifies data at specified addresses

power supply Flash

program or erase operation completion

program or erase cycle completion

or program data to, a sector that is not being

erased, then resumes the erase operation

array data

Publication# 21490

Issue Date: March 1998

Rev: E Amendment/+1

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