AM28F020-150EC Advanced Micro Devices, AM28F020-150EC Datasheet

AM28F020-150EC

Manufacturer Part Number

AM28F020-150EC

Description

Manufacturer

Advanced Micro Devices

Datasheets

1.AM28F020-90EI.pdf (35 pages)

2.AM28F020-120PC.pdf (35 pages)

Specifications of AM28F020-150EC

Case

TSOP

Date_code

06+

Current page: 1 of 35
Download datasheet (377Kb)

Am28F020

2 Megabit (256 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

GENERAL DESCRIPTION

The Am28F020 is a 2 Megabit Flash memory orga-

nized as 256 Kbytes of 8 bits each. AMD’s Flash mem-

ories offer the most cost-effective and reliable read/

write non-volatile random access memor y. The

Am28F020 is packaged in 32-pin PDIP, PLCC, and

TSOP versions. It is designed to be reprogrammed and

erased in-system or in standard EPROM programmers.

Th e Am 28F 020 i s eras ed w hen s h ip ped from

the factory.

The standard Am28F020 offers access times of as fast

as 70 ns, allowing high speed microprocessors to

operate without wait states. To eliminate bus conten-

tion, the device has separate chip enable (CE#) and

output enable (OE#) controls.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F020 uses a command register to manage this

functionality, while maintaining a JEDEC-standard 32-

pin pinout. The command register allows for 100% TTL

level control inputs and fixed power supply levels during

erase and programming, while maintaining maximum

EPROM compatibility.

AMD’s Flash technology reliably stores memory con-

tents even after 10,000 erase and program cycles. The

AMD cell is designed to optimize the erase and pro-

Publication# 14727

Issue Date: January 1998

High performance

— Access times as fast as 70 ns

CMOS low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

Compatible with JEDEC-standard byte-wide

32-pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

10,000 write/erase cycles minimum

Write and erase voltage 12.0 V 5%

FINAL

Rev: F Amendment/+2

gramming mechanisms. In addition, the combination of

advanced tunnel oxide processing and low internal

electric fields for erase and programming operations

produces reliable cycling. The Am28F020 uses a

12.0 5% V

and Flashrite functions.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 mA on

address and data pins from –1 V to V

The Am28F020 is byte programmable using 10 µs

programming pulses in accordance with AMD’s

Flashrite programming algorithm. The typical room

temperature programming time of the Am28F020 is

four seconds. The entire chip is bulk erased using 10

ms erase pulses according to AMD’s Flasherase

algorithm. Typical erasure at room temperature is

accomplished in less than one second. The windowed

package and the 15–20 minutes required for EPROM

erasure using ultraviolet light are eliminated.

Commands are written to the command register using

standard microprocessor write timings. Register con-

tents serve as input to an internal state-machine, which

controls the erase and programming circuitry. During

write cycles, the command register internally latches

Latch-up protected to 100 mA from

–1 V to V

Flasherase Electrical Bulk Chip Erase

— One second typical chip erase time

Flashrite Programming

— 10 µs typical byte program time

— 4 s typical chip program time

Command register architecture for

microprocessor/microcontroller compatible

write interface

On-chip address and data latches

Advanced CMOS flash memory technology

— Low cost single transistor memory cell

Automatic write/erase pulse stop timer

supply input to perform the Flasherase

+1 V

+1 V.

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