EA40QC10-F Nihon Inter Electronics (NIEC), EA40QC10-F Datasheet

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EA40QC10-F

Manufacturer Part Number
EA40QC10-F
Description
Manufacturer
Nihon Inter Electronics (NIEC)
Datasheets

Specifications of EA40QC10-F

Date_code
08+
(A)
(W)
(A)
4A Avg.
■最大定格 Maximum Ratings
■電気的・熱的特性 Electrical/ Thermal Characteristics
■定格・特性曲線
く り 返 し ピ ー ク 逆 電 圧
Repetitive Peak Reverse Voltage
平 均 整 流 電 流
Average Rectified
Forward Current
R.M.S. Forward Current
Surge Forward Current
Operating Junction Temperature Range
Storage Temperature Range
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
*Print Land=20×20mm
0.5
0.2
0.8
0.6
0.4
0.2
10
40
30
20
10
5
2
1
0
0
0.02
0
0
Item
Item
0.02s
0.2
20
0.05
P.C.Board
mounted
AVERAGE REVERSE POWER DISSIPATION
INSTANTANEOUS FORWARD VOLTAGE (V)
サ ー ジ 順 電 流 定 格
FORWARD CURRENT VS. VOLTAGE
平 均 逆 電 力 損 失
f=50Hz,Sine Wave,Non-Repetitive,No Load
SURGE CURRENT RATINGS
瞬 時 順 電 圧 (V)
0.4
40
0.1
I FSM
順 電 圧 特 性
REVERSE VOLTAGE (V)
逆 電 圧 (V)
時 間 (s)
FIG.1
FIG.4
FIG.7
TIME (s)
0.6
0.2
60
Symbol
Symbol
I
R
R
V
F(RMS)
I
V
EA40QC10/EA40QC10-F (per Arm)
T
100
I
T
th(j-a)
th(j-c)
0.8
EA40QC10/EA40QC10-F (Total)
FSM
80
I
RRM
RM
FM
0.5
stg
O
jw
RECT 180
SINE WAVE
EA40QC10/EA40QC10-F
100
1.0
1
Tj=150 C
Tj=25 C
50Hz、正弦全波通電抵抗負荷
50Hz Full Sine Wave Resistive Load
Volts
120
1.2
2
(W)
(A)
(pF)
接 合 部 ・ 周 囲 間
Junction to Ambient
CONDUCTION ANGLE
CONDUCTION ANGLE
40
0
0
通流角
通流角
200
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
20
10
50Hz Full Sine Wave,1cycle, Non-repetitive
0
5
4
3
2
1
0
50Hz正弦全波,1サイクル,非くり返し 
180
180
0.5
0
0
T
RECT 180
SINE WAVE
j
T
=25℃, V
j
=25℃, I
1
−40∼+150
−40∼+150
平 均 順 電 流 − ケ ー ス 温 度 定 格
Conditions
25
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
AVERAGE FORWARD POWER DISSIPATION
Tj=2 5 C,V m = 20m V
1
平 均 順 電 力 損 失 特 性
2
4.44
接 合 部 ・ ケ ー ス 間
100
SBD
AVERAGE FORWARD CURRENT (A)
Conditions
Junction to Case
平 均 順 電 流 (A)
ケ ー ス 温 度 (℃)
接 合 容 量 特 性
50
RM
CASE TEMPERATURE ( C)
Tc=129℃
FM
REVERSE VOLTAGE (V)
Ta=35℃
逆 電 圧 (V)
325
5
=V
=2A,
V
2
RM S
R M
FIG.2
FIG.5
FIG.8
= 100V
,f= 100 kHz ,Ty pica l V alue
10
75
RRM
一素子あたり 
,
20
Per Diode
一素子あたり 
100
EA40QC10/EA40QC10-F (Total)
EA40QC10/EA40QC10-F (per Arm)
3
EA40QC10/EA40QC10-F (Total)
Per Diode
P.C.Board mounted
50
SINE WAVE
基板実装
125
RECT 180
100
1.6
4.0
4
150
200
(A)
(mA)
Unit
CONDUCTION ANGLE
V
A
A
A
A
0
通流角
3.0
2.5
2.0
1.5
1.0
0.5
10
5
2
0
180
0
0
RECT 180
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
■OUTLINE DRAWING(mm)
■APPROX. NET WEIGHT:0.3g
Min.
AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
20
25
平 均 順 電 流 − 周 囲 温 度 定 格
SINE WAVE
ピーク逆電流 − ピーク逆電圧特性
EA40QC10-F
P.C. Board mounted (Print land=20×20mm)
ピ ー ク 逆 電 圧 (V)
AMBIENT TEMPERATURE ( C)
40
PEAK REVERSE VOLTAGE (V)
50
周 囲 温 度 (℃)
Typ.
Tj= 150 C
FIG.3
FIG.6
60
75
Max.
0.85
5.5
80
EA40QC10/EA40QC10-F (per Arm)
1
100
80
EA40QC10/EA40QC10-F (Total)
℃/W
℃/W
100
125
Unit
mA
V
120
150

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