AM29LV640MH SPANSION [SPANSION], AM29LV640MH Datasheet - Page 61

• Manufacturer Part Number: AM29LV640MH
• Description: 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
• Manufacturer: SPANSION [SPANSION]

REVISION SUMMARY
Revision A (March 19, 2002)
Initial release as abbreviated Advance Information
data sheet. This document contains information that
was previously released in publication number 25301.
Ordering Information
The package marking for the Fortified BGA option has
been updated.
Physical Dimensions
Added drawing that shows both TS056 and TSR056
specifications.
Revision B (April 26, 2002)
Expanded data sheet to full specification version.
Revision C (May 23, 2002)
Changed packaging from 63-ball FBGA to 64-ball For-
tified BGA. Changed Block Diagram: Moved V
RY/BY# to Input/Output Buffers. Changed note about
WP#/ACC pin to indicate internal pullup to V
fied Table 4: Sector Group Protection/Unprotection Ad-
dress Table. Changed 47h Address data from 0004h
to 0001h in Table 9.
Revision D (August 8, 2002)
Alternate CE# Controlled Erase and Program
Operations
Added t
Erase and Program Operations
Added t
TSOP and BGA PIN Capacitance
Added the FBGA package.
Program Suspend/Program Resume Command
Sequence
Changed 15 μs typical to maximum and added 5 μs
typical.
Erase Suspend/Erase Resume Commands
Changed typical from 20 μs to 5 μs and added a maxi-
mum of 20 μs.
Special package handling instructions
Modified the special handling wording.
DC Characteristics table
Deleted the Iacc specification row.
CFI
Changed text in the third paragraph of CFI to read
“reading array data.”
December 14, 2005
RH
BUSY
parameter to table.
parameter to table.
D A T A S H E E T
CC
IO
. Modi-
Am29LV640MH/L
from
Revision D+1 (September 10, 2002)
Product Selector Guide
Added Note 2.
Ordering Information
Added Note 1.
Sector Erase Command Sequence
Deleted statement that describes the outcome of
when the Embedded Erase operation is in progress.
Revision E (December 5, 2002)
Product Selector Guide and Read-Only
Characteristics
Added a 30 ns option to t
112R and 120R speed options.
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text
and figure 3.
SecSi Sector Flash Memory Region, and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Noted that the ACC function and unlock bypass modes
are not available when the SecSi sector is enabled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Com-
mand Sequence
Noted that the SecSi Sector, autoselect, and CFI
functions are unavailable when a program or erase
operation is in progress.
Common Flash Memory Interface (CFI)
Changed CFI website address
Figure 6. Program Suspend/Program Resume
Change wait time to 15
CMOS Compatible
Added I
mum to 1.9. Removed typos in notes.
Hardware Reset, CMOS Tables, Erase and Program
Operations, Temporary Sector Unprotect, and
Alternate CE# Controlled Erase and Program
Operations
Added Note.
Revision E+1 (February 16, 2003)
Distinctive Characteristics
Corrected performance characteristics.
LR
row to table. Changed V
μ
s.
PACC
and t
OE
IH1
standard for the
and V
IH2
mini-
59