AM29LV640MH SPANSION [SPANSION], AM29LV640MH Datasheet - Page 14
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AM29LV640MH
Manufacturer Part Number
AM29LV640MH
Description
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
Manufacturer
SPANSION [SPANSION]
Datasheet
1.AM29LV640MH.pdf
(62 pages)
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at V
ming, or device damage may result. In addition, no ex-
ternal pullup is necessary since the WP#/ACC pin has
internal pullup to V
Autoselect Functions
If the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the
lect Command Sequence
tion.
Standby Mode
When the system is not reading or writing to the de-
vice, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at V
(Note that this is a more restricted voltage range than
V
V
the standby current will be greater. The device re-
quires standard access time (t
when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
Refer to the
current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables
12
IH
IO
.) If CE# and RESET# are held at V
± 0.3 V, the device will be in the standby mode, but
HH
for operations other than accelerated program-
DC Characteristics
CC.
Autoselect Mode
sections for more informa-
table for the standby
CE
) for read access
IH
, but not within
and
IO
D A T A S H E E T
± 0.3 V.
Autose-
Am29LV640MH/L
this mode when addresses remain stable for t
30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard ad-
dress access timings provide new data when ad-
dresses are changed. While in sleep mode, output
data is latched and always available to the system.
Refer to the
sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of re-
setting the device to reading array data. When the RE-
SET# pin is driven low for at least a period of t
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is
ready to accept another command sequence, to en-
sure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V
draws CMOS standby current (I
at V
be greater.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
Refer to the
rameters and to Figure 16 for the timing diagram.
Output Disable Mode
When the OE# input is at V
disabled. The output pins are placed in the high
impedance state.
IL
but not within V
DC Characteristics
AC Characteristics
SS
±0.3 V, the standby current will
IH
, output from the device is
CC4
tables for RESET# pa-
table for the automatic
December 14, 2005
SS
). If RESET# is held
±0.3 V, the device
RP
ACC
, the
+