AM29LV320MH SPANSION [SPANSION], AM29LV320MH Datasheet - Page 58

• Manufacturer Part Number: AM29LV320MH
• Description: 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
• Manufacturer: SPANSION [SPANSION]

REVISION SUMMARY
Revision A (May 30, 2002)
Initial release as Advance Information data sheet.
Revision A+1 (September 3, 2002)
Mirrorbit 32 Mbit Device Family
Changed the 48-pin TSOP to 40-pin TSOP.
Alternate CE# Controlled Erase and Program
Operations
Added t
Erase and Program Operations
Added t
Figure 16. Program Operation Timings
Added RY/BY# to waveform.
TSOP and BGA PIN Capacitance
Added the FBGA package.
Program Suspend/Program Resume Command
Sequence
Changed 15 μs typical to maximum and added 5 μs
typical.
Erase Suspend/Erase Resume Commands
Changed typical from 20 μs to 5 μs and added a maxi-
mum of 20 μs.
Product Selector Guide
Added Note 2.
Ordering Information
Added 101R, 112R, and 120R to Valid Combinations
Table.
Added Note 1.
Read-Only Operations
Alternate CE# Controlled Erase and Program
Operations
Erase and Program Operations
Added 101R, 112R, and 120R to Speed Options.
Revision A+2 (November 15, 2002)
Customer Lockable: SecSi Sector NOT
Programmed or Protected At the Factory
Added second bullet and figure
Product Selector Guide and Read-Only Operations
Added 30 ns to the 112R and 120R to Max page ac-
cess time and Max OE# Access time.
Changed the Chip Enable to Output High Z and Out-
put Enable to Output High Z to 16 ns.
56
RH
BUSY
parameter to table.
parameter to table.
D A T A S H E E T
Am29LV320MH/L
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Com-
mand Sequence
Noted that the SecSi Sector, autoselect, and CFI
functions are unavailable when a program or erase
operation is in progress.
Common Flash Memory Interface (CFI)
Changed CFI website address.
CMOS Compatable
Added I
Removed V
V
Clarified note #5.
Removed note #6.
Read-Only Operations
Added note #3.
Absolute Maximum Rating
Changed the Ambient Temperature with Power Ap-
plied from –55°C to +125°C to –65°C to +125°C.
Revision A+3 (February 14, 2003)
Distinctive Characteristics
Corrected performance characteristics.
AC Characteristics
Added Note
Input values in the t
the Erase and Program Options table that were previ-
ously TBD. Also added notes 5 and 6.
Input values in the t
the Alternate CE# Controlled Erase and Program Op-
tions table that were previously TBD. Also added notes
5 and 6.
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 3 and 4.
Revision B (May 7, 2003)
Distinctive Characteristics
Added typical active read current
Global
Converted to full datasheet version.
Modified SecSi Sector Flash Memory Region section
to include ESN references.
IH
, V
OL
LR
, V
parameter symbol to table.
OH1
IL
, V
and V
IH
, V
OL
OH2.
WHWH
WHWH
, and V
1 and t
1 and t
OH
and replaced with VIL,
WHWH
WHWH
December 14, 2005
2 parameters in
2 parameters in