AM29LV320MH SPANSION [SPANSION], AM29LV320MH Datasheet
AM29LV320MH
Related parts for AM29LV320MH
AM29LV320MH Summary of contents
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Data Sheet This product has been retired and is not available for designs. For new and current designs, S29GL032A supersedes Am29LV320M H/L and is the factory-recommended migration path. Please refer to the S29GL032A datasheet for specifications and ordering information. Availability ...
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... Am29LV320MH/L 32 Megabit ( 16-Bit 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control This product has been retired and is not available for designs. For new and current designs, S29GL032A supersedes Am29LV320M H/L and is the factory-recommended migration path. Please refer to the S29GL032A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. ...
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... GENERAL DESCRIPTION The Am29LV320MH Mbit, 3.0 volt single power supply flash memory device organized as 2,097,152 words or 4,194,304 bytes. The device has an 8-bit/16-bit bus and can be programmed either in the host system or in standard EPROM programmers. An access time of 90, 100, 110, or 120 ns is available. ...
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... Yes 64 Fortified BGA Implementing a Common Layout for AMD MirrorBit → Prod- and Intel StrataFlash Memory Devices → Tech- Migrating from Single-byte to Three-byte Device IDs AMD MirrorBit™ White Paper Am29LV320MH/L RY/BY# WP#, ACC WP# Protection Yes ACC only No WP Kbyte Yes WP#/ACC pin ...
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... Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 52 TSOP Pin and BGA Package Capacitance . . . . . 53 Data Retention Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 54 TS056/TSR056—56-Pin Standard and Reverse Pinout Thin Small Outline Package (TSOP) .............................................. 54 LAA064—64-Ball Fortified Ball Grid Array (FBGA Package .................................................................................. 55 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 56 Am29LV320MH/L ) ........... 31 IH ).............. 32 IL December 14, 2005 ...
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... Max. OE# Access Time (ns) 25 Note: 1. See “AC Characteristics” for full specifications. 2. For the Am29LV320MH/L device, the last numeric digit in the speed option (e.g. 90R, 101, 112, 120) is used for internal purposes only. Please use OPNs as listed when placing orders. BLOCK DIAGRAM RY/BY# ...
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... DQ10 17 DQ2 18 DQ9 19 DQ1 20 DQ8 21 DQ0 56-Pin Standard TSOP 56-Pin Reverse TSOP Am29LV320MH A16 53 BYTE DQ15/A-1 50 DQ7 49 DQ14 48 DQ6 47 DQ13 46 DQ5 45 DQ12 44 DQ4 ...
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... DQ8 CE The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. Am29LV320MH DQ6 DQ13 DQ4 DQ11 DQ3 ...
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... Product Selector Guide for speed options and voltage supply tolerances Output Buffer power Device Ground Pin Not Connected Internally LOGIC SYMBOL 21 A20–A0 CE# OE# WE# WP#/ACC RESET BYTE# Am29LV320MH DQ15–DQ0 (A-1) RY/BY# December 14, 2005 ...
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... Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. Note: For the Am29LV320MH/L device, the last numeric digit in the speed option (e.g. 90R, 101, 112, 120) is used for internal purposes only. Please use OPNs as listed when placing orders. Am29LV320MH/L ° ...
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... LSB (A-1) address function. VersatileIO™ (V The VersatileIO™ set the voltage levels that the device generates and tolerates on CE# and DQ I/Os to the same voltage level that is asserted on V tion” on page 9 for V Am29LV320MH/L DQ8–DQ15 DQ0– BYTE# BYTE# DQ7 = V ...
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... Command Sequence tion. Standby Mode When the system is not reading or writing to the de- vice, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, Am29LV320MH/L AC Char- section contains timing specification tables on this pin, the device auto- HH CC. Autoselect Mode ...
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... ACC Refer to the rameters and to Figure 16 for the timing diagram. Output Disable Mode When the OE# input disabled. The output pins are placed in the high impedance state. Am29LV320MH/L ±0.3 V, the device RESET# is held CC4 ±0.3 V, the standby current will SS AC Characteristics ...
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... Am29LV320MH/L 8-bit 16-bit Address Range Address Range (in hexadecimal) (in hexadecimal) 000000–00FFFF 000000–007FFF 010000–01FFFF 008000–00FFFF 020000–02FFFF 010000–017FFF 030000–03FFFF 018000–01FFFF 040000–04FFFF 020000–027FFF 050000–05FFFF 028000–02FFFF 060000–06FFFF 030000– ...
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... A20:A0 in word mode (BYTE Am29LV320MH/L 8-bit 16-bit Address Range Address Range (in hexadecimal) (in hexadecimal) 2C0000–2CFFFF 160000–167FFF 2D0000–2DFFFF 168000–16FFFF 2E0000–2EFFFF 170000–177FFF 2F0000–2FFFFF 178000–17FFFF 300000–30FFFF 180000–187FFF 310000–31FFFF 188000– ...
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... Sector Address Don’t care. IH Am29LV320MH/L . Refer to the Autoselect ID section for more information. DQ8 to DQ15 A0 DQ7 to DQ0 BYTE# BYTE 01h 7Eh 1Dh H 22 ...
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... SA24–SA27 SA28–SA31 SA32–SA35 SA36–SA39 SA40–SA43 SA44–SA47 SA48–SA51 SA52–SA55 SA56–SA59 SA60 Autoselect Mode SA61 SA62 SA63 Am29LV320MH/L Address Table A20–A15 SA0 000000 SA1 000001 SA2 000010 SA3 000011 0001xx 0010xx 0011xx 0100xx ...
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... CC Notes: 1. All protected sector groups unprotected (If WP the first or last sector will remain protected). 2. All previously protected sector groups are protected once again. Figure 1. Temporary Sector Group Unprotect Operation Am29LV320MH/L START RESET (Note 1) Perform Erase or Program Operations RESET ...
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... Reset PLSCNT = 1 Increment PLSCNT No Yes PLSCNT = 1000? Yes Device failed Sector Group Unprotect Algorithm Am29LV320MH/L START PLSCNT = 1 RESET Wait 1 μs Temporary Sector No First Write Group Unprotect Cycle = 60h? Mode Yes All sector No groups ...
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... Customers may opt to have their code programmed by AMD through the AMD ExpressFlash service (Express Flash Factory Locked). The devices are then shipped from AMD’s factory with the SecSi Sector permanently locked. Contact an AMD representative for details on using AMD’s ExpressFlash service. Am29LV320MH/L Command Definitions This IH ...
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... For further information, please refer to the CFI Specifi- cation and CFI Publication 100, available via the World Wide Web at http://www.amd.com/flash/cfi. Alterna- tively, contact an AMD representative for copies of these documents. Am29LV320MH/L , the device does not ac- LKO is greater than V CC LKO ...
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... Typical timeout per individual block erase 2 Typical timeout for full chip erase 2 Max. timeout for byte/word write 2 N Max. timeout for buffer write 2 times typical Max. timeout per individual block erase 2 Max. timeout for full chip erase 2 Am29LV320MH/L Description Description pin present) N µs N µ ...
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... Number of Erase Block Regions within device (01h = uniform device, 02h = boot device) Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) Erase Block Region 2 Information (refer to CFI publication 100) Erase Block Region 3 Information (refer to CFI publication 100) Erase Block Region 4 Information (refer to CFI publication 100) Am29LV320MH/L N December 14, 2005 ...
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... The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after Am29LV320MH/L AC Characteristics section for timing 23 ...
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... SecSi Sector is en- abled. Word/Byte Program Command Sequence Programming is a four-bus-cycle operation. The pro- gram command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written Am29LV320MH/L A7:A0 A6:A-1 (x16) (x8) 00h 00h ...
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... Write Buffer Programming operation. The device then begins programming. Data polling should be used while monitoring the last address location loaded into the write buffer. DQ7, DQ6, DQ5, and DQ1 should be monitored to determine the device status during Write Buffer Programming. Am29LV320MH/L –A . All subsequent ad- MAX ...
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... In addition, no external pullup is nec- essary since the WP#/ACC pin has internal pullup Figure 5 illustrates the algorithm for the program oper- ation. Refer to the table in the AC Characteristics section for parameters, and Figure 17 for timing diagrams. Am29LV320MH/L for operations HH Erase and Program Operations December 14, 2005 ...
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... Yes No 4. Yes Yes No PASS Am29LV320MH/L When Sector Address is specified, any address in the selected sector is acceptable. However, when loading Write-Buffer address locations with data, all addresses must fall within the selected Write-Buffer Page. Therefore, DQ7 should be verified. DQ5= “1”, then the device FAILED. If this flowchart location was reached because DQ1= “ ...
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... Program Suspend mode and continue the programming opera- tion. Further writes of the Resume command are ig- nored. Another Program Suspend command can be written after the device has resume programming. Am29LV320MH/L Write Operation Status for more December 14, 2005 ...
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... The system can monitor DQ3 to determine if the sec- tor erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the ris- Am29LV320MH/L section for infor- ta- 29 ...
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... Command Sequence No section for infor- Notes: 1. See Tables 10 and 11 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. Figure 7. Erase Operation Am29LV320MH/L Write Operation Status section for more and Autoselect Command Sequence START Write Erase (Notes 1, 2) ...
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... Erase Suspend mode. Erase Suspend command is valid only during a sector erase operation. 16. Erase Resume command is valid only during Erase Suspend mode. 17. Command is valid when device is ready to read array data or when device is in autoselect mode. Am29LV320MH Fourth Fifth Sixth ...
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... Erase Suspend mode. Erase Suspend Autoselect Command command is valid only during a sector erase operation. 17. Erase Resume command is valid only during Erase Suspend mode. 18. Command is valid when device is ready to read array data or when device is in autoselect mode. Am29LV320MH Fourth Fifth Sixth Addr ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 8. Data# Polling Algorithm Am29LV320MH/L section shows the Data# Yes No Yes Yes ...
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... Table 12 shows the outputs for Toggle Bit I on DQ6. Figure 9 shows the toggle bit algorithm. Figure 21 in the “AC Characteristics” section shows the toggle bit timing diagrams. Figure 22 shows the differences be- tween DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit Am29LV320MH/L II. December 14, 2005 ...
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... DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cy- cles, determining the status as described in the previ- ous paragraph. Alternatively, it may choose to perform Am29LV320MH/L RY/BY#: Ready/Busy# sub- 35 ...
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... DQ7# Toggle 0 0 Toggle 0 Invalid (not allowed) Data 1 No toggle 0 Data DQ7# Toggle 0 DQ7# Toggle 0 DQ7# Toggle 0 Am29LV320MH/L Sector Erase Command Write Buffer DQ2 DQ3 (Note 2) DQ1 RY/BY# N/A No toggle Toggle N ...
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... The I/Os will not operate when V 1.8 V. December 14, 2005 +0.8 V –0.5 V –2.0 V Figure 10 +0 –2.0 V for SS Figure 11. /V range Am29LV320MH Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform 37 ...
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... min I = –2.0 mA min I = –100 µ min max < minimum V for CE# and DQ I/ Am29LV320MH/L Min Typ Max ±1 ±1 – ...
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... Note < INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Measurement Level . IO Figure 13. Input Waveforms and Measurement Levels Am29LV320MH/L All Speeds 1 TTL gate 0.0–3.0 1.5 0 the reference level is 0 ...
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... Max 25 Max Max Min Min Min t RC Addresses Stable t ACC OEH t CE HIGH Z Figure 14. Read Operation Timing Am29LV320MH/L Speed Options 101, 101R 112R 112 120R 120 100 110 120 100 110 120 100 110 120 ...
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... AC CHARACTERISTICS A21-A2 A1-A0 Data Bus CE# OE# * Figure shows device in word mode. Addresses are A1–A-1 for byte mode. December 14, 2005 Same Page PACC PACC t ACC Qa Qb Figure 15. Page Read Timings Am29LV320MH PACC ...
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... Min . Contact AMD for information on AC operation with Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 16. Reset Timings Am29LV320MH/L All Speed Options Unit μs 20 500 ns 500 μs 20 ≠ CC. ...
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... AC operation with V 7. When using the program suspend/resume feature, if the suspend command is issued within t upon resuming the programming operation. If the suspend command is issued after t reading the status bits upon resuming. Am29LV320MH/L Speed Options 101, 112, 120, 90R 101R ...
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... POLL WPH A0h t BUSY is the true data at the program address. OUT Figure 17. Program Operation Timings Am29LV320MH/L Read Status Data (last two cycles WHWH1 Status D OUT VHH December 14, 2005 ...
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... SA = sector address (for Sector Erase Valid Address for reading status data (see “Write Operation Status”. 2. Illustration shows device in word mode. Figure 19. Chip/Sector Erase Operation Timings December 14, 2005 555h for chip erase WPH t DH 30h 10 for Chip Erase t BUSY Am29LV320MH/L Read Status Data WHWH2 In Complete Progress ...
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... Note Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 20. Data# Polling Timings (During Embedded Algorithms ACC Complement Complement Status Data Status Data Am29LV320MH/L VA High Z True Valid Data High Z True Valid Data December 14, 2005 ...
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... AHT AS t AHT t ASO t CEPH t OEPH t OE Valid Valid Status Status (second read) Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 22. DQ2 vs. DQ6 Am29LV320MH/L Valid Valid Data Status (stops toggling) Erase Resume Erase Erase Complete Read 47 ...
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... VIDR CE# WE# RY/BY# Figure 23. Temporary Sector Group Unprotect Timing Diagram Min Min . Contact AMD for information on AC operation with V CC Program or Erase Command Sequence t RSP Am29LV320MH/L All Speed Options Unit 500 ns 4 µs ≠ CC ...
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... For sector group protect, A6:A0 = 0xx0010. For sector group unprotect, A6:A0 = 1xx0010. Figure 24. Sector Group Protect and Unprotect Timing Diagram December 14, 2005 Valid* Valid* 60h Sector Group Protect: 150 µs, Sector Group Unprotect Am29LV320MH/L Valid* Verify 40h Status 49 ...
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... Per Word Typ Per Byte Typ Per Word Typ Byte Typ Word Byte Typ Word Typ Min Max = V . Contact AMD for information on AC operation with Am29LV320MH/L Speed Options 101, 112, 120, 90R 101R 112R 120R Unit 90 100 110 120 ...
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... Data# Polling POLL GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase is the data written to the device. OUT Operation Timings Am29LV320MH/L PA DQ7#, D DQ15 OUT 51 ...
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... Per Word 15 200 1040 Per Byte 6.25 Per Word 12.5 31.5 = 3.0, worst case temperature. Maximum values are valid up to and including 100,000 –100 mA = 3.0 V, one pin at a time. CC Am29LV320MH/L Unit Comments sec Excludes 00h programming prior to erasure (Note 6) 64 sec µs µs µs 38 µs ...
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... Parameter Description Minimum Pattern Data Retention Time December 14, 2005 Test Setup TSOP BGA TSOP OUT BGA TSOP BGA Test Conditions 150°C 125°C Am29LV320MH/L Typ Max Unit 6 7 5.4 6 3.9 4.7 pF Min ...
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... PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 mm. 7 THESE DIMESIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 mm AND 0.25 mm FROM THE LEAD TIP. 8. LEAD COPLANARITY SHALL BE WITHIN 0. MEASURED FROM THE SEATING PLANE. 9 DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS. Am29LV320MH/L 3160\38.10A December 14, 2005 ...
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... PHYSICAL DIMENSIONS LAA064—64-Ball Fortified Ball Grid Array ( December 14, 2005 BGA Package Am29LV320MH/L 55 ...
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... Input values into table that were previously TBD. Added note 3 and 4. Revision B (May 7, 2003) Distinctive Characteristics Added typical active read current Global Converted to full datasheet version. Modified SecSi Sector Flash Memory Region section to include ESN references. Am29LV320MH/L , and V and replaced with VIL, OH OH2. 1 and t 2 parameters in WHWH WHWH ...
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... This product has been retired and is not available for designs. For new and current designs, S29GL032A supersedes Am29LV320M H/L and is the factory-rec- parameter. ommended migration path. Please refer to the S29GL032A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. Am29LV320MH/L information. POLL 57 ...