AM29LV128MH AMD [Advanced Micro Devices], AM29LV128MH Datasheet
AM29LV128MH
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AM29LV128MH Summary of contents
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Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig- inally developed the specification, these ...
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... DATASHEET Am29LV128MH/L 128 Megabit ( 16-Bit/ 8-Bit) MirrorBit ™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O ™ Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES Single power supply operation — 3 volt read, erase, and program operations VersatileI/O ™ control — Device generates data output voltages and tolerates ...
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... GENERAL DESCRIPTION The Am29LV128MH 128 Mbit, 3.0 volt single power supply flash memory devices organized as 8,388,608 words or 16,777,216 bytes. The device has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The de- vice can be programmed either in the host system or in standard EPROM programmers ...
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... Operation Timings .......................................................................... 56 Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 56 Erase And Programming Performance TSOP Pin and BGA Package Capacitance . . . . . 58 Data Retention Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 59 TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline Package (TSOP) ..................................................................... 59 LAA064—64-Ball Fortified Ball Grid Array Package .............................................................. 60 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 61 Am29LV128MH/L ) ........... 34 IH ).............. ...
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... Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29LV128MH/L Am29LV128MH/L 123R V = 1.65–3 113 123 (Note 2) (Note 1.65–3 1.65–3 110 120 110 120 ...
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... DQ10 17 DQ2 18 DQ9 19 DQ1 20 DQ8 21 DQ0 September 9, 2003 56-Pin Standard TSOP 56-Pin Reverse TSOP Am29LV128MH A16 53 BYTE DQ15/A-1 50 DQ7 49 DQ14 48 DQ6 47 DQ13 46 DQ5 45 DQ12 44 DQ4 ...
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... DQ0 DQ8 CE package body is exposed to temperatures above 150 ° C for prolonged periods of time. Am29LV128MH DQ13 DQ6 DQ4 DQ11 DQ3 G3 H3 DQ9 DQ1 G2 H2 ...
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... Product Selector Guide for speed options and voltage supply tolerances Output Buffer power Device Ground Pin Not Connected Internally September 9, 2003 LOGIC SYMBOL 23 A22–A0 CE# OE# WE# WP#/ACC RESET BYTE# Am29LV128MH DQ15–DQ0 (A-1) RY/BY# 7 ...
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... Example: Am29LV128MH12RPCIN. For Fortified BGA pacakges, modify the speed option indicator as follows: [103N = 10N, 113N = 11N, 123N = 12N, 93N = no change]. The designator “ ...
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... LSB (A-1) address function. VersatileIO™ (V The VersatileIO™ set the voltage levels that the device generates and tolerates on CE# and DQ I/Os to the same voltage level that is asserted on V for V options on this device. IO Am29LV128MH/L DQ8–DQ15 DQ0– BYTE# BYTE# DQ7 = (Note 2) ...
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... OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at V (Note that this is a more restricted voltage range than Am29LV128MH/L on this pin, the device auto- HH from the WP#/ACC pin returns the device ...
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... Flash memory. Refer to the AC Characteristics tables for RESET# pa- rameters and to Figure 16 for the timing diagram. Output Disable Mode When the OE# input disabled. The output pins are placed in the high impedance state. Am29LV128MH/L , the RP ±0.3 V, the device RESET# is held CC4 ± ...
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... Am29LV128MH/L 8-bit 16-bit Address Range Address Range (in hexadecimal) (in hexadecimal) 000000–00FFFF 000000–007FFF 010000–01FFFF 008000–00FFFF 020000–02FFFF 010000–017FFF 030000–03FFFF 018000–01FFFF 040000–04FFFF 020000–027FFF 050000–05FFFF 028000–02FFFF 060000–06FFFF 030000– ...
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... Am29LV128MH/L 8-bit 16-bit Address Range Address Range (in hexadecimal) (in hexadecimal) 2F0000–2FFFFF 178000–17FFFF 300000–30FFFF 180000–187FFF 310000–31FFFF 188000–18FFFF 320000–32FFFF 190000–197FFF 330000–33FFFF 198000–19FFFF 340000–34FFFF 1A0000–1A7FFF 350000–35FFFF 1A8000– ...
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... Am29LV128MH/L 8-bit 16-bit Address Range Address Range (in hexadecimal) (in hexadecimal) 5F0000–5FFFFF 2F8000–2FFFFF 600000–60FFFF 300000–307FFF 610000–61FFFF 308000–30FFFF 620000–62FFFF 310000–317FFF 630000–63FFFF 318000–31FFFF 640000–64FFFF 320000–327FFF 650000–65FFFF 328000– ...
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... Am29LV128MH/L 8-bit 16-bit Address Range Address Range (in hexadecimal) (in hexadecimal) 8F0000–8FFFFF 478000–47FFFF 900000–90FFFF 480000–487FFF 910000–91FFFF 488000–48FFFF 920000–92FFFF 490000–497FFF 930000–93FFFF 498000–49FFFF 940000–94FFFF 4A0000–4A7FFF 950000–95FFFF 4A8000– ...
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... Am29LV128MH/L 8-bit 16-bit Address Range Address Range (in hexadecimal) (in hexadecimal) BF0000–BFFFFF 5F8000–5FFFFF C00000–C0FFFF 600000–607FFF C10000–C1FFFF 608000–60FFFF C20000–C2FFFF 610000–617FFF C30000–C3FFFF 618000–61FFFF C40000–C4FFFF 620000–627FFF C50000–C5FFFF 628000– ...
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... Am29LV128MH/L 8-bit 16-bit Address Range Address Range (in hexadecimal) (in hexadecimal) EF0000–EFFFFF 778000–77FFFF F00000–F0FFFF 780000–787FFF F10000–F1FFFF 788000–78FFFF F20000–F2FFFF 790000–797FFF F30000–F3FFFF 798000–79FFFF F40000–F4FFFF 7A0000–7A7FFF F50000–F5FFFF 7A8000– ...
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... Sector Address Don’t care. IH Am29LV128MH/L . Refer to the Autoselect ID DQ8 to DQ15 A0 DQ7 to DQ0 BYTE# BYTE 01h 7Eh 12h 00h 01h (protected), ...
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... SA236–SA239 001011xx SA240–SA243 001100xx SA244–SA247 001101xx SA248–SA251 001110xx SA252 001111xx SA253 010000xx SA254 010001xx SA255 010010xx 010011xx 010100xx Am29LV128MH/L A22–A15 010101xx 010110xx 010111xx 011000xx 011001xx 011010xx 011011xx 011100xx 011101xx 011110xx 011111xx 100000xx 100001xx 100010xx 100011xx 100100xx ...
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... IL Notes: 1. All protected sector groups unprotected (If WP the first or last sector will remain protected). 2. All previously protected sector groups are protected once again. Figure 1. Temporary Sector Group Unprotect Operation Am29LV128MH/L START RESET (Note 1) Perform Erase or Program Operations RESET ...
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... Reset PLSCNT = 1 Increment PLSCNT No Yes PLSCNT = 1000? Yes Device failed Sector Group Unprotect Algorithm Am29LV128MH/L START PLSCNT = 1 RESET Wait 1 µs No First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes No All sectors protected? Yes ...
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... AMD through the AMD ExpressFlash service (Express Flash Factory Locked). The devices are then shipped from AMD’s factory with the SecSi Sector permanently locked. Contact an AMD representative for details on using AMD’s ExpressFlash service. Am29LV128MH This IH ID September 9, 2003 ...
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... For further information, please refer to the CFI Specifi- cation and CFI Publication 100, available via the World Wide Web at http://www.amd.com/flash/cfi. Alterna- tively, contact an AMD representative for copies of these documents. Am29LV128MH/L , the device does not ac- LKO is greater than V CC LKO ...
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... Max. timeout for byte/word write 2 times typical N Max. timeout for buffer write 2 times typical Max. timeout per individual block erase 2 N Max. timeout for full chip erase 2 times typical (00h = not supported) Am29LV128MH/L Description Description N µs N µ s (00h = not supported ...
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... Number of Erase Block Regions within device (01h = uniform device, 02h = boot device) Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) Erase Block Region 2 Information (refer to CFI publication 100) Erase Block Region 3 Information (refer to CFI publication 100) Erase Block Region 4 Information (refer to CFI publication 100) Am29LV128MH ...
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... Not Supported, D7-D4: Volt, D3-D0: 100 mV Top/Bottom Boot Sector Flag 00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h = Top Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top WP# protect Program Suspend 00h = Not Supported, 01h = Supported Am29LV128MH/L September 9, 2003 ...
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... A read cycle to an address containing a sector ad- dress (SA), and the address 02h on A7–A0 in word mode returns 01h if the sector is protected, or 00h unprotected. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the de- vice was previously in Erase Suspend). Am29LV128MH/L 27 ...
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... Write buffer locations may be loaded in any order. The write-buffer-page address must be the same for all address/data pairs loaded into the write buffer. (This means Write Buffer Programming cannot be per- formed across multiple write-buffer pages. This also Am29LV128MH/L –A . All subsequent ad- MAX 4 ...
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... WP# has an internal pullup; when un- connected, WP Figure 5 illustrates the algorithm for the program oper- ation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 18 for timing diagrams. Am29LV128MH/L pair to a different for operations HH ...
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... Yes No 4. Yes Yes No PASS Am29LV128MH/L When Sector Address is specified, any address in the selected sector is acceptable. However, when loading Write-Buffer address locations with data, all addresses must fall within the selected Write-Buffer Page. Therefore, DQ7 should be verified. DQ5= “1”, then the device FAILED. If this flowchart location was reached because DQ1= “ ...
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... Program Suspend mode and continue the programming operation. The address of the pro- gram-suspended sector is required when writing this command. Further writes of the Resume command are ignored. Another Program Suspend command can be written after the device has resume programming. Am29LV128MH/L 31 ...
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... Erase Suspend during the time-out period resets the device to the read mode. The system must re- write the command sequence and any additional ad- dresses and commands. Note that the SecSi Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress. Am29LV128MH/L September 9, 2003 ...
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... To resume the sector erase operation, the system must write the Erase Resume command. The address of the erase-suspended sector is required when writ- ing this command. Further writes of the Resume com- mand are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Am29LV128MH/L 33 ...
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... Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 17. The Erase Resume command is valid only during the Erase Suspend mode. 18. Command is valid when device is ready to read array data or when device is in autoselect mode. Am29LV128MH Fourth Fifth Sixth Addr ...
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... Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 17. The Erase Resume command is valid only during the Erase Suspend mode. 18. Command is valid when device is ready to read array data or when device is in autoselect mode. Am29LV128MH Fourth Fifth Sixth Addr ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 8. Data# Polling Algorithm Am29LV128MH/L Yes No Yes Yes No ...
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... Table 12 shows the outputs for Toggle Bit I on DQ6. Figure 9 shows the toggle bit algorithm. Figure 22 in the “AC Characteristics” section shows the toggle bit timing diagrams. Figure 23 shows the differences be- tween DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II. Am29LV128MH/L 37 ...
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... DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cy- cles, determining the status as described in the previ- ous paragraph. Alternatively, it may choose to perform Am29LV128MH/L September 9, 2003 ...
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... DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these conditions DQ1 produces a “ 1 ” Write-to-Buffer-Abort-Reset command sequence to re- turn the device to reading array data. See Write Buffer Programming section for more details. Am29LV128MH ...
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... Table 12. Write Operation Status DQ7 DQ5 (Note 2) DQ6 (Note 1) DQ7# Toggle 0 0 Toggle 0 Invalid (not allowed) Data 1 No toggle 0 Data DQ7# Toggle 0 DQ7# Toggle 0 DQ7# Toggle 0 Am29LV128MH/L DQ2 DQ3 (Note 2) DQ1 RY/BY# N/A No toggle Toggle N N/A Toggle N N/A N/A N/A 0 N/A N/A 0 ...
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... V. IO September 9, 2003 +0.8 V –0.5 V –2.0 V Figure 10 +0 –2.0 V for SS Figure 11. /V range Am29LV128MH Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform 41 ...
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... Automatic sleep mode enables the low power mode when addresses remain stable for < maximum Maximum max voltage requirements voltage requirements Not 100% tested. 10. Includes RY/BY# Am29LV128MH/L Min Typ Max ± 1.0 35 ± 1 MHz MHz MHz MHz MHz ...
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... Output timing measurement reference levels Note < INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Measurement Level . IO Am29LV128MH/L All Speeds 1 TTL gate 0.0–3.0 1.5 0 the reference level is 0 OUTPUTS Changing, State Unknown 0 ...
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... Contact AMD for information on AC operation with Addresses Stable t ACC OEH t CE HIGH Z Figure 14. Read Operation Timings Am29LV128MH/L Speed Options 103, 103R 113 113R 123 123R 100 110 120 100 110 120 100 110 120 ...
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... AC CHARACTERISTICS A22-A2 A1-A0* Data Bus CE# OE# * Figure shows word mode. Addresses are A1–A-1 for byte mode. September 9, 2003 Same Page PACC PACC t ACC Qa Qb Figure 15. Page Read Timings Am29LV128MH PACC ...
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... Contact AMD for information on AC operation with Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 16. Reset Timings Am29LV128MH/L All Speed Options Unit µ 500 ns 500 µ ≠ ...
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... Per Word Typ Byte Typ Word Typ Byte Typ Word Typ Typ Min Min Min = V . Contact AMD for information on AC operation with Am29LV128MH/L Speed Options 93R 103, 103R 113, 113R 123, 123R Unit 90 100 110 120 ...
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... RY/BY# CE#, OE# RESET# RY/BY# CE#, OE# RESET Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 17. Reset Timings Am29LV128MH September 9, 2003 ...
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... WPH A0h t BUSY is the true data at the program address. OUT Figure 18. Program Operation Timings Am29LV128MH/L Read Status Data (last two cycles WHWH1 Status D OUT VHH 49 ...
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... These waveforms are for the word mode. Figure 20. Chip/Sector Erase Operation Timings 555h for chip erase WPH t DH 30h 10 for Chip Erase t BUSY Am29LV128MH/L Read Status Data WHWH2 In Complete Progress t RB September 9, 2003 ...
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... Note Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 21. Data# Polling Timings (During Embedded Algorithms) September 9, 2003 Complement Complement Status Data Status Data Am29LV128MH/L VA High Z Valid Data True High Z True Valid Data 51 ...
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... AHT AS t AHT t ASO t CEPH t OEPH t OE Valid Valid Status Status (second read) Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 23. DQ2 vs. DQ6 Am29LV128MH/L Valid Valid Data Status (stops toggling) Erase Resume Erase Erase Complete Read September 9, 2003 ...
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... CE# WE# RY/BY# Figure 24. Temporary Sector Group Unprotect Timing Diagram September 9, 2003 Min Min = V . Contact AMD for information on AC operation with Program or Erase Command Sequence t RSP Am29LV128MH/L All Speed Options Unit 500 ns 4 µs ≠ ...
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... For sector group protect For sector group unprotect Figure 25. Sector Group Protect and Unprotect Timing Diagram Valid* Valid* Verify 60h 40h Sector Group Protect: 150 µs, Sector Group Unprotect Am29LV128MH/L Valid* Status September 9, 2003 ...
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... Per Byte Typ Per Word Typ Byte Typ Word Typ Byte Typ Word Typ Typ = V . Contact AMD for information on AC operation with Am29LV128MH/L Speed Options 103, 103R 113, 113R 123, 123R Unit 100 110 120 ...
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... BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase is the data written to the device. OUT Operation Timings Min –1.0 V –1.0 V –100 mA = 3.0 V, one pin at a time. CC Am29LV128MH/L PA DQ7# D OUT Max 12 1 +100 mA September 9, 2003 ...
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... Programming specifications assume that CC Am29LV128MH/L Comments Excludes 00h programming prior to erasure (Note 6) Excludes system level overhead (Note 8) 57 ...
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... Parameter Description Minimum Pattern Data Retention Time Test Setup TSOP BGA TSOP OUT BGA TSOP BGA Test Conditions 150 ° C 125 ° C Am29LV128MH/L Typ Max Unit 6 7 5.4 6 3.9 4.7 pF Min Unit ...
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... PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 mm. 7 THESE DIMESIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 mm AND 0.25 mm FROM THE LEAD TIP. 8. LEAD COPLANARITY SHALL BE WITHIN 0. MEASURED FROM THE SEATING PLANE. 9 DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS. Am29LV128MH/L 3160\38.10A 59 ...
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... PHYSICAL DIMENSIONS LAA064—64-Ball Fortified Ball Grid Array Package Am29LV128MH/L September 9, 2003 ...
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... SecSi Sector Flash Memory Region, and Enter SecSi Sector/Exit SecSi Sector Command Sequence Noted that the ACC function and unlock bypass modes are not available when the SecSi sector is enabled. Am29LV128MH/L (full volt and V from table and added OL OH ...
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... Revision C (May 16, 2003) Global Converted to full datasheet version. Modified SecSi Sector Flash Memory Region section to include ESN references. Changed data sheet title to Am29LV128MH/L. Erase and Programming Performance Input values into table that were previously TBD. Modified notes. Revision (June 11, 2003) ...
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Global Added 90 ns speed options and Ordering Part Num- bers Ordering Information Added Note regarding Ordering Part Numbers. Program Suspend/Program Resume Command Sequence Modified last paragraph. Command Definitions, Table 10 Modified First Addr for Program/Erase Suspend and Resume. AC ...