SI-3552 VISHAY [Vishay Siliconix], SI-3552 Datasheet - Page 6

• Manufacturer Part Number: SI-3552
• Description: N- and P-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si3552DV
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-6
–0.2
–0.4
0.1
0.6
0.4
0.2
0.0
10
10
1
8
6
4
2
0
0.00
–50
0
V
I
–25
D
Source-Drain Diode Forward Voltage
DS
= 1.8 A
V
T
0.3
= 15 V
1
J
SD
= 150 C
Q
0
I
– Source-to-Drain Voltage (V)
D
g
Threshold Voltage
T
= 250 A
– Total Gate Charge (nC)
J
– Temperature ( C)
25
Gate Charge
0.6
2
50
0.9
3
T
75
J
= 25 C
100
1.2
4
125
1.5
150
5
New Product
0.6
0.5
0.4
0.3
0.2
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
8
6
4
2
0
–50
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
On-Resistance vs. Junction Temperature
–25
V
I
D
GS
= 1.8 A
I
D
V
= 10 V
2
T
GS
= 1 A
J
0
– Junction Temperature ( C)
– Gate-to-Source Voltage (V)
0.1
25
4
Time (sec)
I
D
50
= 1.8 A
S-61831—Rev. A, 23-Aug-99
1
Document Number: 70971
6
75
100
8
125
10
150
10
30