SI-3552 VISHAY [Vishay Siliconix], SI-3552 Datasheet - Page 4

• Manufacturer Part Number: SI-3552
• Description: N- and P-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si3552DV
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
–0.0
–0.2
–0.4
–0.6
–0.8
0.4
0.2
0.1
0.01
10
0.1
1
–50
0.00
2
1
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
– Source-to-Drain Voltage (V)
J
Threshold Voltage
T
I
= 150 C
D
0.4
J
10
– Temperature ( C)
= 250 A
25
–3
Single Pulse
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10
100
–2
T
J
= 25 C
1.0
125
Square Wave Pulse Duration (sec)
1.2
150
New Product
10
–1
1
0.40
0.32
0.24
0.16
0.08
8
6
4
2
0
0
0.01
0
Single Pulse Power (Junction-to-Ambient)
On-Resistance vs. Gate-to-Source Voltage
I
D
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
= 2 A
10
V
Notes:
2
P
GS
DM
JM
– Gate-to-Source Voltage (V)
0.1
– T
A
t
1
= P
Time (sec)
t
4
2
DM
I
D
Z
= 2.5 A
thJA
thJA
100
t
t
(t)
1
2
S-61831—Rev. A, 23-Aug-99
= 130 C/W
1
Document Number: 70971
6
600
8
10
10
30