HY27SF161G2A HYNIX [Hynix Semiconductor], HY27SF161G2A Datasheet - Page 4

• Manufacturer Part Number: HY27SF161G2A
• Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

1. SUMMARY DESCRIPTION
The Hynix HY27SF(08/16)1G2A series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc
Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided
into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected
Flash cells.
A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in
typical 2ms on a 128K-byte(X8 device) block.
Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data
input/output as well as command input. This interface allows a reduced pin count and easy migration towards different
densities, without any rearrangement of footprint.
Commands, Data and Addresses are synchronously introduced using CE, WE, ALE and CLE input pin. The on-chip Pro-
gram/Erase Controller automates all program and erase functions including pulse repetition, where required, and inter-
nal verification and margining of data.
The modify operations can be locked using the WP input pin or using the extended lock block feature described later.
The output pin R/B (open drain buffer) signals the status of the device during each operation. In a system with multi-
ple memories the R/B pins can be connected all together to provide a global status signal.
Even the write-intensive systems can take advantage of the HY27SF(08/16)1G2A extended reliability of 100K program/
erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.
The chip could be offered with the CE don’t care function. This function allows the direct download of the code from
the NAND Flash memory device by a microcontroller, since the CE transitions do not stop the read operation.
The copy back function allows the optimization of defective blocks management: when a page program operation fails
the data can be directly programmed in another page inside the same array section without the time consuming serial
data insertion phase.
The cache program feature allows the data insertion in the cache register while the data register is copied into the
flash array. This pipelined program operation improves the program throughput when long files are written inside the
memory. A cache read feature is also implemented. This feature allows to dramatically improve the read throughput
when consecutive pages have to be streamed out.
The HYNIX HY27SF(08/16)1G2A series is available in 48 - TSOP1 12 x 20 mm, 48 - USOP 12 x 17 mm, FBGA 9 x 11
mm.
1.1 Product List
Rev 0.3 / Nov. 2006
PART NUMBER
HY27SF081G2A
HY27SF161G2A
ORIZATION
x16
x8
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1.7V - 1.95 Volt
VCC RANGE
HY27SF(08/16)1G2A Series
63FBGA / 48TSOP1 / 48USOP1
PACKAGE
48TSOP1
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