HY27SF161G2A HYNIX [Hynix Semiconductor], HY27SF161G2A Datasheet - Page 20

• Manufacturer Part Number: HY27SF161G2A
• Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev 0.3 / Nov. 2006
Operating
Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Leve
Output Low Current (R/B)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (1.7V - 1.95V)
Parameter
Sequential
Read
Program
Erase
Parameter
Table 9: DC and Operating Characteristics
Symbol
(R/B)
I
I
I
I
I
V
V
V
I
I
V
I
CC1
CC2
CC3
CC4
CC5
LO
OH
OL
LI
OL
IH
IL
Table 10: AC Conditions
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
V
OUT
V
Test Conditions
IN=
CE=Vcc-0.2,
I
WP=0V/Vcc
WP=0V/Vcc
=0 -to Vcc (max)
I
I
0 to Vcc (max)
OH
V
t
OL
OUT
CE=V
CE=V
RC
OL
=-100uA
=100uA
=50ns
=0.2V
=0mA
-
-
-
-
IH
IL
,
,
HY27SF(08/16)1G2A Series
Vccx0.8
Vcc-0.1
1 TTL GATE and CL=30pF
Min
-0.3
3
-
-
-
-
-
-
-
-
0V to Vcc
1.8Volt
Vcc / 2
Value
1.8Volt
5ns
Typ
10
10
10
10
4
-
-
-
-
-
-
-
Vcc+0.3
Vccx0.2
± 10
± 10
Max
0.1
20
20
20
50
1
-
-
Unit
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
20