AM29DL640D120EE AMD [Advanced Micro Devices], AM29DL640D120EE Datasheet - Page 50

• Manufacturer Part Number: AM29DL640D120EE
• Description: 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
48
Sector Erase Time
Chip Erase Time
Byte Program Time
Accelerated Byte/Word Program Time
Word Program Time
Chip Program Time
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
Table 12
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
for further information on command definitions.
Parameter
A
(Note
= 25°C, f = 1.0 MHz.
3)
Description
Control Pin Capacitance
Parameter Description
SS
SS
CC
Output Capacitance
Word Mode
Input Capacitance
Byte Mode
on all pins except I/O pins
on all I/O pins
. Test conditions: V
CC
= 2.7 V, 1,000,000 cycles.
(Note
Typ
100
0.7
CC
42
28
5
4
7
Am29DL640D
= 3.0 V, one pin at a time.
1)
(Note
Max
150
120
210
126
15
84
2)
Test Setup
V
V
V
OUT
Test Conditions
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
Min
= 0
CC
150°C
125°C
Unit
sec
sec
sec
, 1,000,000 cycles. Additionally,
µs
µs
µs
Excludes 00h programming
prior to erasure
Excludes system level
overhead
Typ
8.5
7.5
6
Comments
December 13, 2005
V
+100 mA
CC
12.5 V
Min
Max
(Note
10
20
Max
+ 1.0 V
7.5
12
9
(Note
5)
Years
Years
Unit
4)
Unit
pF
pF
pF