AM29DL400BB-120EC AMD [Advanced Micro Devices], AM29DL400BB-120EC Datasheet - Page 42

• Manufacturer Part Number: AM29DL400BB-120EC
• Description: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

REVISION SUMMARY
Revision B
Expanded data sheet from Advance Information to Pre-
liminary version.
Revision C
Global
Changed -70R speed option to -70.
Figure 1, In-system Sector Protect/Unprotect
Algorithm
Added “PSLSCNT=1” to sector protect algorithm.
Reset Command
Deleted last paragraph; applies only to hardware reset.
DQ6: Toggle Bit I
First and second para., clarified that the toggle bit may
be read “at any address within the programming or
erasing bank,” not at “any address.” Fourth para., clar-
ified “device” to “bank”
Operating Ranges
Deleted reference to regulated voltage range
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
42
P R E L I M I N A R Y
Am29DL400B
DC Characteristics
Added Note 4 reference to I
Erase and Program Operations
Corrected note references for t
t
Temporary Sector Unprotect
Added note reference to t
Figure 24, Sector Protect/Unprotect Timing
Diagram
Updated figure to correct address waveform—valid ad-
dress not required in first cycle.
Alternate CE# Controlled Erase/Program
Operations
Corrected note references for t
Erase and Programming Performance
In Note 2, changed worst case endurance to 1 million
cycles.
VCS
VIDR
CC6
.
WHWH1
and I
WHWH1
CC7
, t
, t
WHWH2
.
WHWH2
, and