AM29DL400BB-120EC AMD [Advanced Micro Devices], AM29DL400BB-120EC Datasheet

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AM29DL400BB-120EC

Manufacturer Part Number
AM29DL400BB-120EC
Description
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
Am29DL400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
Simultaneous Read/Write operations
— Host system can program or erase in one bank,
— Zero latency between read and write operations
— Read-while-erase
— Read-while-program
Single power supply operation
— 2.7 to 3.6 volt read and write operations for
Manufactured on 0.35 µm process technology
High performance
— Access times as fast as 70 ns
Low current consumption (typical values
at 5 MHz)
— 7 mA active read current
— 21 mA active read-while-program or read-while-
— 17 mA active program-while-erase-suspended
— 200 nA in standby mode
— 200 nA in automatic sleep mode
— Standard t
Flexible sector architecture
— Two 16 Kword, two 8 Kword, four 4 Kword, and
— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and
— Any combination of sectors can be erased
— Supports full chip erase
Unlock Bypass Program Command
— Reduces overall programming time when
then immediately and simultaneously read from
the other bank
battery-powered applications
erase current
current
transition from automatic sleep mode to active
mode
six 32 Kword sectors in word mode
six 64 Kbyte sectors in byte mode
issuing multiple program command sequences
PRELIMINARY
CE
chip enable access time applies to
Sector protection
— Hardware method of locking a sector to prevent
— Sectors can be locked in-system or via
— Temporary Sector Unprotect feature allows code
Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically
Minimum 1 million program/erase cycles
guaranteed per sector
Package options
— 44-pin SO
— 48-pin TSOP
Compatible with JEDEC standards
— Pinout and software compatible with
— Superior inadvertent write protection
Data# Polling and Toggle Bits
— Provides a software method of detecting
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or
Erase Suspend/Erase Resume
— Suspends or resumes erasing sectors to allow
— No need to suspend if sector is in the other bank
Hardware reset pin (RESET#)
— Hardware method of resetting the device to
any program or erase operation within that
sector
programming equipment
changes in previously locked sectors
pre-programs and erases sectors or entire chip
programs and verifies data at specified address
single-power-supply flash standard
program or erase cycle completion
erase cycle completion
reading and programming in other sectors
reading array data
Publication# 21606
Issue Date: April 1998
Rev: C Amendment/0

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AM29DL400BB-120EC Summary of contents

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PRELIMINARY Am29DL400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the ...

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GENERAL DESCRIPTION The Am29DL400B Mbit, 3.0 volt-only flash memory device, organized as 262,144 words or 524,288 bytes. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide (x16) data ap- pears on DQ0–DQ15; the ...

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PRODUCT SELECTOR GUIDE Family Part Number Speed Options (Full Voltage Range: V Max Access Time (ns) CE# Access (ns) OE# Access (ns) Note: See “AC Characteristics” for full specifications. BLOCK DIAGRAM A0–A17 RY/BY# A0–A17 STATE RESET# ...

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CONNECTION DIAGRAMS A15 1 2 A14 A13 3 A12 4 A11 5 A10 WE# 11 RESET RY/BY A17 ...

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CONNECTION DIAGRAMS RY/BY# NC A17 CE OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 ...

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PIN DESCRIPTION A0-A17 = 18 Addresses DQ0-DQ14 = 15 Data Inputs/Outputs DQ15/A-1 = DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode) CE# = Chip Enable OE# = Output Enable WE# = Write Enable BYTE# = Selects 8-bit ...

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... EC, EI, FC, FI, Am29DL400BB-70 Am29DL400BT-80 Am29DL400BB-80 EC, EI, EE, Am29DL400BT-90 FC, FI, FE, Am29DL400BB-90 SC, SI, SE Am29DL400BT-120 Am29DL400BB-120 OPTIONAL PROCESSING Blank = Standard Processing B = Burn-in (Contact an AMD representative for more information) TEMPERATURE RANGE C = Commercial (0°C to +70° Industrial (–40°C to +85° Extended (– ...

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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register it- self does not occupy any addressable memory loca- tion. The register is a ...

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WE# and CE and OE For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to “Word/Byte ...

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RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of reset- ting the device to reading array data. When the RE- SET# pin is driven low for at least a period of t device immediately terminates any operation ...

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Table 2. Sector Address Bank Address Bank Sector A17 A16 A15 SA0 SA1 SA2 Bank 2 SA3 SA4 SA5 SA6 1 1 ...

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... When using programming equipment, the autoselect mode requires V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown Am29DL400BB Bottom Boot Sector Architecture Sector Size A14 A13 A12 (Kbytes/Kwords ...

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Table 4. Am29DL400B Autoselect Codes (High Voltage Method) Description Mode CE# Manufacturer ID: AMD L Device ID: Word L Am29DL400B Byte L (Top Boot Block) Device ID: Word L Am29DL400B Byte L (Bottom Boot Block) Sector Protection Verification L Note: ...

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START PLSCNT = 1 RESET Wait First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes Set up sector address Sector Protect: Write 60h to sector address with ...

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Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 5 for com- mand definitions). In addition, the following hardware data protection measures prevent accidental erasure or ...

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Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. Table 5 shows the address and data requirements. This method is an alternative ...

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Figure 3 illustrates the algorithm for the program oper- ation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 17 for timing diagrams. Write Program Command Sequence Data Poll from System Embedded ...

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The system can determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to the Write Operation Status section for information on these sta- tus bits. Once the ...

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Table 5. Am29DL400B Command Definitions Command Sequence (Note 1) Addr Data Addr Data Read (Note 6) 1 Reset (Note 7) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Top Boot Block Byte Word Device ID, 4 Bottom Boot ...

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WRITE OPERATION STATUS The device provides several bits to determine the sta- tus of a write operation in the bank where a program or erase operation is in progress: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the ...

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RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...

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The remaining scenario is that the system initially de- termines that the toggle bit is toggling and DQ5 has not gone high. ...

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Status Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Erase Suspended Sector Erase-Suspend- Erase Read Suspend Non-Erase Mode Suspended Sector Erase-Suspend-Program Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing ...

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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . – +150 C Ambient Temperature with Power Applied ...

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DC CHARACTERISTICS CMOS Compatible Parameter Symbol Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current LO V Active Read Current CC I CC1 (Note 1) V Active Write Current CC I CC2 ...

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DC CHARACTERISTICS Zero-Power Flash 500 1000 Note: Addresses are switching at 1 MHz Figure 9. I Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 ...

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TEST CONDITIONS Device Under Test C L 6.2 k Note: Diodes are IN3064 or equivalent Figure 11. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted 3.0 V 1.5 V Input 0.0 V Figure 12. Input Waveforms ...

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AC CHARACTERISTICS Read-Only Operations Parameter JEDEC Std. Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output ...

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AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std RESET# Pin Low (During Embedded Algorithms) t Ready to Read Mode (See Note) RESET# Pin Low (NOT During Embedded t Ready Algorithms) to Read Mode (See Note) t RESET# Pulse Width RP ...

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AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std. Description t t CE# to BYTE# Switching Low or High ELFL/ ELFH t BYTE# Switching Low to Output HIGH Z FLQZ t BYTE# Switching High to Output Active FHQV CE# OE# BYTE# ...

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AC CHARACTERISTICS Erase and Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL AS t Address Setup Time to OE# low during toggle bit polling ASO t t ...

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AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# t GHWL OE# WE Data RY/BY VCS Notes program address program data Illustration shows device ...

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AC CHARACTERISTICS t WC Valid PA Addresses t AH CE# OE WE# t WPH t DS Valid Data In WE# Controlled Write Cycle Figure 19. Back-to-Back Read/Write Cycle Timings t RC Addresses VA t ACC t CE CE# ...

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AC CHARACTERISTICS Addresses CE# t OEH WE# OE Valid Data DQ6/DQ2 RY/BY# Note Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read ...

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AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std. Description t V Rise and Fall Time (See Note) VIDR ID RESET# Setup Time for Temporary Sector t RSP Unprotect RESET# Hold Time from RY/BY# High for t RRB Temporary Sector Unprotect ...

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AC CHARACTERISTICS RESET# SA, A6, A1, A0 Sector Protect/Unprotect Data 60h 1 µs CE# WE# OE# * For sector protect For sector unprotect ...

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AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time ELAX Data Setup Time DVEH ...

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AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation ...

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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Program Time Word Program Time Byte Mode Chip Program Time (Note 3) Word Mode Notes: 1. Typical program and erase times assume the following conditions 3.0 ...

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PHYSICAL DIMENSIONS* TS 048—48-Pin Standard TSOP (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM (0.0098") BSC * For reference only. BSC is an ANSI standard for Basic Space Centering TSR048—48-Pin Reverse TSOP (measured in millimeters) Pin 1 ...

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PHYSICAL DIMENSIONS (continued) SO 044—44-Pin Small Outline (measured in millimeters 1.27 NOM. TOP VIEW 28.00 28.40 2.17 2.45 0.35 0.50 SIDE VIEW 13.10 15.70 13.50 16.30 ...

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REVISION SUMMARY Revision B Expanded data sheet from Advance Information to Pre- liminary version. Revision C Global Changed -70R speed option to -70. Figure 1, In-system Sector Protect/Unprotect Algorithm Added “PSLSCNT=1” to sector protect algorithm. Reset Command Deleted last paragraph; ...

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