BS62LV8001DC55 BSI [Brilliance Semiconductor], BS62LV8001DC55 Datasheet - Page 6
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BS62LV8001DC55
Manufacturer Part Number
BS62LV8001DC55
Description
Very Low Power CMOS SRAM 1M X 8 bit
Manufacturer
BSI [Brilliance Semiconductor]
Datasheet
1.BS62LV8001DC55.pdf
(10 pages)
n AC ELECTRICAL CHARACTERISTICS (T
n SWITCHING WAVEFORMS (WRITE CYCLE)
R0201-BS62LV8001
WRITE CYCLE
WRITE CYCLE 1
PARAMETER
JEDEC
NAME
t
t
t
t
t
t
t
t
t
t
t
t
E1LWH
WLWH
E2LAX
WHQX
AVWH
WHAX
WLQZ
DVWH
WHDX
GHQZ
AVWL
AVAX
ADDRESS
OE
CE1
CE2
WE
D
D
OUT
IN
PARANETER
NAME
t
t
t
t
t
t
t
t
t
t
t
t
WR1
WR2
WHZ
OHZ
WC
CW
DW
OW
(1)
AW
WP
AS
DH
Write Cycle Time
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write Recovery Time
Write to Output High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
DESCRIPTION
t
t
AS
OHZ
A
(4,10)
= -40
(5)
(5)
O
C to +85
6
(CE1, WE)
t
AW
(CE2)
t
t
t
O
CW
CW
WP
t
C)
WC
(11)
(11)
(2)
CYCLE TIME : 55ns
MIN. TYP. MAX.
55
40
40
30
25
--
--
0
0
0
0
5
(V
CC
t
= 3.0~5.5V)
DW
--
--
--
--
--
--
--
--
--
--
--
--
t
t
25
25
--
--
--
--
--
--
--
--
--
--
WR1
WR2
t
DH
(3)
(3)
CYCLE TIME : 70ns
MIN. TYP. MAX.
70
50
50
35
30
--
--
0
0
0
0
5
(V
BS62LV8001
CC
= 2.7~5.5V)
--
--
--
--
--
--
--
--
--
--
--
--
30
30
Revision
May.
--
--
--
--
--
--
--
--
--
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2006
2.3