GS71116ATP ETC1 [List of Unclassifed Manufacturers], GS71116ATP Datasheet - Page 8

• Manufacturer Part Number: GS71116ATP
• Description: 1Mb Asynchronous SRAM
• Manufacturer: ETC1 [List of Unclassifed Manufacturers]

Write Cycle
* These parameters are sampled and are not 100% tested.
Rev: 1.07 12/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output Low Z from end of write
Address valid to end of write
Chip enable to end of write
Byte enable to end of write
Write recovery time (WE)
Write recovery time (CE)
Write to output in High Z
Address set up time
Write pulse width
Data set up time
Write cycle time
Data hold time
Parameter
Address
CE
UB, LB
OE
Data Out
Symbol
tWHZ
tWLZ
tWR1
tWC
tAW
tCW
tBW
tDW
tWP
tWR
tDH
tAS
High impedance
*
*
Read Cycle 2: WE = V
Min
3.5
—
7
5
5
5
0
5
0
0
0
3
8/16
-7
tLZ
tBLZ
tOLZ
Max
tAA
—
—
—
—
—
—
—
—
—
—
—
3
tAC
tAB
Min
tRC
tOE
5.5
5.5
5.5
5.5
—
8
4
0
0
0
0
3
IH
-8
Max
3.5
—
—
—
—
—
—
—
—
—
—
—
Data valid
Min
10
—
7
7
7
5
0
7
0
0
0
3
tOHZ
tBHZ
tHZ
-10
Max
—
—
—
—
—
—
—
—
—
—
—
4
Min
12
—
GS71116ATP/J/U
8
8
8
6
0
8
0
0
0
3
© 2001, GSI Technology
-12
Max
—
—
—
—
—
—
—
—
—
—
—
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns