QM30 Mitsubishi Electric Semiconductor, QM30 Datasheet - Page 4

• Manufacturer Part Number: QM30
• Description: MEDIUM POWER SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
10
–1
3
2
7
5
4
3
2
7
5
4
3
0
FORWARD BIAS SAFE OPERATING AREA
7
5
3
2
5
3
2
7
5
3
2
1
0
7
10
10
2
1
0
10
COLLECTOR-EMITTER VOLTAGE V
–1
TRANSIENT THERMAL IMPEDANCE
T
0
–3
NON–REPETITIVE
0
BASE REVERSE CURRENT –I
C
CHARACTERISTIC (TRANSISTOR)
t
2
t
2
2 3 45 7
=25°C
s
f
SWITCHING TIME VS. BASE
3
2 3 4 5 7
3
4
4
5
5
CURRENT (TYPICAL)
7
7
10
10
10
1
1
–2
TIME (s)
2
2
2
10
3
3
3
4
4
4
0
V
I
I
5
5
5
B1
C
CC
7
7
7
=30A
=0.6A
10
2 3 4 5 7
10
=300V
10
T
T
2
–1
2
j
j
=25°C
=125°C
2
2
3
3
B2
4
4
5
5
(A)
CE
7
7
10
10
10
(V)
1
0
3
100
10
10
10
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
7
5
4
3
2
7
5
4
3
2
COLLECTOR-EMITTER REVERSE VOLTAGE
2
1
0
REVERSE BIAS SAFE OPERATING AREA
0.4
COLLECTOR-EMITTER VOLTAGE V
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
j
=125°C
COLLECTOR-EMITTER REVERSE
20
100
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
COLLECTOR
DISSIPATION
0.8
40
200
60
1.2
300
–V
CEO
80 100 120 140
T
T
j
j
=25°C
=125°C
400
1.6
(V)
SECOND
BREAKDOWN
AREA
500 600
QM30DY-H
2.0
C
I
INSULATED TYPE
B2
( C)
–1A
–3A
–5A
=
CE
160
700
2.4
(V)
Feb.1999