QM30 Mitsubishi Electric Semiconductor, QM30 Datasheet - Page 2

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QM30

Manufacturer Part Number
QM30
Description
MEDIUM POWER SWITCHING USE INSULATED TYPE
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet

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ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
V
V
V
V
I
–I
P
I
–I
T
T
V
I
I
I
V
V
–V
h
t
t
t
R
R
R
C
B
CEX
CBO
EBO
on
s
f
j
stg
FE
CEX (SUS)
CEX
CBO
EBO
C
iso
CE (sat)
BE (sat)
th (j-c) Q
th (j-c) R
th (c-f)
C
CSM
Symbol
Symbol
CEO
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Parameter
Parameter
(Tj=25 C, unless otherwise noted)
I
V
Emitter open
Collector open
DC
DC (forward diode current)
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
V
V
V
I
–I
I
V
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
(Tj=25 C, unless otherwise noted)
C
C
C
C
EB
CE
CB
EB
CC
C
=1A, V
=30A, I
=30A, V
=25 C
=30A (diode forward voltage)
=2V
=600V, V
=7V
=600V, Emitter open
=600V, I
EB
B
CE
=0.4A
=2V
=2V/5V
C
EB
=30A, I
=2V
B1
=–I
Test conditions
B2
Conditions
=0.6A
MITSUBISHI TRANSISTOR MODULES
MEDIUM POWER SWITCHING USE
75/100
Min.
–40~+150
–40~+125
1.47~1.96
1.96~2.94
Ratings
15~20
20~30
Limits
2500
Typ.
600
600
600
250
300
210
1.8
30
30
7
QM30DY-H
INSULATED TYPE
Max.
1.85
0.15
200
1.0
1.0
2.0
2.5
1.5
3.0
0.5
2.0
12
kg·cm
kg·cm
Feb.1999
Unit
N·m
N·m
Unit
mA
mA
mA
C/ W
C/ W
C/ W
W
V
V
V
V
A
A
A
A
V
g
V
V
V
C
C
s
s
s

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