K7A801800 Samsung semiconductor, K7A801800 Datasheet - Page 9

• Manufacturer Part Number: K7A801800
• Description: 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
• Manufacturer: Samsung semiconductor

K7A403600B
K7A403200B
K7A401800B
DC ELECTRICAL CHARACTERISTICS
* V
** V
** In Case of I/O Pins, the Max. V
TEST CONDITIONS
(V
* The above parameters are also guaranteed at industrial temperature range.
The above parameters are also guaranteed at industrial temperature range.
Input Leakage Current(except ZZ)
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
Output Low Voltage(2.5V I/O)
Output High Voltage(2.5V I/O)
Input Low Voltage(3.3V I/O)
Input High Voltage(3.3V I/O)
Input Low Voltage(2.5V I/O)
Input High Voltage(2.5V I/O)
Input Pulse Level(for 3.3V I/O)
Input Pulse Level(for 2.5V I/O)
Input Rise and Fall Time(Measured at 0.3V and 2.7V for 3.3V I/O)
Input Rise and Fall Time(Measured at 0.3V and 2.1V for 2.5V I/O)
Input and Output Timing Reference Levels for 3.3V I/O
Input and Output Timing Reference Levels for 2.5V I/O
Output Load
DD
IL
IH
=3.3V+0.3V/-0.165V,V
(Min)=-2.0(Pulse Width
(Max)=4.6(Pulse Width
PARAMETER
t
DDQ
t
CYC
CYC
IH
=V
=3.3V+0.3/-0.165V or V
/
/
2)
2)
DDQ
PARAMETER
+0.3V
SYMBOL
I
I
V
V
V
V
V
V
I
I
I
V
V
SB1
SB2
I
CC
OL
SB
IL
OL
OH
OL
OH
IH
IH
IL
IL
128Kx36/x32 & 256Kx18 Synchronous SRAM
V
Output Disabled, V
Device Selected, I
All Inputs=V
Device deselected, I
f=Max, All Inputs 0.2V or
Device deselected, I
f = 0, All Inputs=fixed (V
Device deselected, I
f=Max, All Inputs V
I
I
I
I
OL
OH
OL
OH
DD
= 8.0mA
= 1.0mA
= -4.0mA
= -1.0mA
= Max ; V
DD
(T
=3.3V+0.3V/-0.165V,V
A
=0 to 70 C, V
IL
or V
IN
- 9 -
=V
TEST CONDITIONS
IH
OUT
SS
OUT
IL
OUT
OUT
OUT
, Cycle Time cyc Min
to V
or V
=0mA, ZZ V
=V
=0mA,ZZ V
=0mA, ZZ 0.2V,
=0mA, ZZ V
DD
DD
SS
DD
-0.2V or 0.2V)
IH
=3.3V+0.3V/-0.165V)
V
to V
DD
DDQ
-0.2V
DDQ
=2.5V+0.4V/-0.125V, T
IL
,
IL
DD
,
-0.2V,
-16
-14
-16
-14
See Fig. 1
0 to 2.5V
VALUE
0 to 3V
V
-0.5*
-0.3*
MIN
1.5V
2.4
2.0
2.0
1.7
DDQ
1ns
1ns
-2
-2
A
-
-
-
-
-
-
-
-
=0 to 70 C)
/2
V
V
DD
DD
MAX
290
250
140
130
0.4
0.4
0.8
0.7
+2
+2
80
50
+0.3**
+0.3**
-
-
Nov 2001
Rev 1.0
UNIT
mA
mA
mA
mA
V
V
V
V
V
V
V
V
A
A