K6R4016V1 Samsung semiconductor, K6R4016V1 Datasheet - Page 5

• Manufacturer Part Number: K6R4016V1
• Description: 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
• Manufacturer: Samsung semiconductor

READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
K6R4004C1D
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
AC CHARACTERISTICS
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
Output Loads(A)
D
* Capacitive Load consists of all components of the
OUT
test environment.
Parameter
Z
O
= 50
Parameter
(T
A
Symbol
=0 to 70 C, V
t
R
t
t
t
t
OHZ
t
t
t
t
t
OLZ
t
CO
OH
RC
AA
OE
HZ
PU
PD
LZ
L
= 50
30pF*
CC
V
L
=5.0V 10%, unless otherwise noted.)
= 1.5V
- 5 -
Min
10
3
0
0
0
3
0
-
-
-
-
Output Loads(B)
for t
HZ
, t
K6R4004C1D-10
LZ
* Including Scope and Jig Capacitance
, t
WHZ
, t
OW
D
255
OUT
, t
OLZ
See below
0V to 3V
Value
& t
1.5V
3ns
OHZ
Max
10
10
10
5
5
5
-
-
-
-
-
PRELIMINARY
CMOS SRAM
+5.0V
480
5pF*
July 2002
Unit
Rev 1.0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns