K6R4016V1 Samsung semiconductor, K6R4016V1 Datasheet - Page 3

• Manufacturer Part Number: K6R4016V1
• Description: 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
• Manufacturer: Samsung semiconductor

FUNCTIONAL BLOCK DIAGRAM
1M x 4 Bit High-Speed CMOS Static RAM
FEATURES
K6R4004C1D
• Fast Access Time 10ns(Max.)
• Low Power Dissipation
• TTL Compatible Inputs and Outputs
• Fully Static Operation
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
• Operating in Commercial and Industrial Temperature range.
A
A
A
A
A
A
A
A
A
A
CS
WE
OE
- No Clock or Refresh required
Standby (TTL)
Operating
Single 5.0V 10
0
1
2
3
4
5
6
7
8
9
I/O
1
~I/O
4
(CMOS) : 5mA(Max.)
K6R4004C1D-J : 32-SOJ-400
Clk Gen.
K6R4004C1D-10 : 65mA(Max.)
%
: 20mA(Max.)
Power Supply
Cont.
Data
Gen.
CLK
A
10
A
11
Pre-Charge Circuit
A
1024 x 4 Columns
12
Column Select
Memory Array
A
1024 Rows
13
I/O Circuit
A
14
A
15
A
16
A
17
A
18
A
19
- 3 -
The K6R4004C1D is a 4,194,304-bit high-speed Static Random
Access Memory organized as 1,048,576 words by 4 bits. The
K6R4004C1D uses 4 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The K6R4004C1D is packaged
in a 400 mil 32-pin plastic SOJ.
GENERAL DESCRIPTION
PIN CONFIGURATION
PIN FUNCTION
Pin Name
I/O
A
0
1
WE
V
V
N.C
I/O
I/O
OE
Vcc
Vss
WE
CS
CS
A
A
A
A
A
A
A
A
A
A
- A
~ I/O
CC
SS
0
1
2
3
4
5
6
7
8
9
1
2
19
10
11
12
13
14
15
16
4
1
2
3
4
5
6
7
8
9
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+5.0V)
Ground
No Connection
SOJ
(Top View)
PRELIMINARY
Pin Function
CMOS SRAM
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
I/O
Vss
Vcc
I/O
N.C
A
A
A
A
A
A
A
A
A
A
OE
19
18
17
16
15
14
13
12
11
10
4
3
July 2002
Rev 1.0