K6R1016C1 Samsung semiconductor, K6R1016C1 Datasheet - Page 6

• Manufacturer Part Number: K6R1016C1
• Description: 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
• Manufacturer: Samsung semiconductor

K6R1016V1D
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
TIMING DIAGRAMS
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
UB, LB Valid to End of Write
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
UB, LB Access Time
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
UB, LB Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
UB, LB Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
TIMING WAVEFORM OF READ CYCLE(1)
Address
Data Out
Parameter
Parameter
Previous Valid Data
Symbol
t
t
t
t
t
t
t
t
t
t
WHZ
t
WP1
t
WC
CW
AW
WP
BW
WR
DW
OW
DH
AS
Symbol
t
t
t
t
t
t
t
OHZ
t
t
t
t
t
t
OLZ
t
BHZ
BLZ
CO
OH
RC
AA
OE
BA
HZ
PU
PD
LZ
Min
(Address Controlled
8
6
0
6
6
8
6
0
0
4
0
3
K6R1016V1D-08
t
Min
OH
8
3
0
0
0
0
0
3
0
-
-
-
-
-
K6R1016V1D-08
- 6 -
t
AA
Max
,
4
CS=OE=V
-
-
-
-
-
-
-
-
-
-
-
Max
8
8
4
4
4
4
4
8
t
-
-
-
-
-
-
RC
IL
, WE=V
Min
IH
10
10
7
0
7
7
7
0
0
5
0
3
, UB, LB=V
Min
10
K6R1016V1D-10
3
0
0
0
0
0
3
0
-
-
-
-
-
K6R1016V1D-10
IL
Valid Data
)
CMOS SRAM
Max
5
Max
-
-
-
-
-
-
-
-
-
-
-
10
10
10
5
5
5
5
5
-
-
-
-
-
-
for AT&T
Revision 3.0
June 2002
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns